An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application
	Zhang ML; Hou QF
刊名	solid-state electronics
	2009
卷号	53 期号:3 页码:332-335
关键词	AlGaN/AlN/GaN HEMT MOCVD SiC substrate Power device
ISSN号	0038-1101
通讯作者	wang xl chinese acad sci ctr mat sci inst semicond pob 912 beijing 100083 peoples r china. e-mail address: xlwang@semi.ac.cn
中文摘要	optimized algan/aln/gan high electron mobility transistor (hemt) with high mobility gan channel layer structures were grown on 2-in. diameter semi-insulating 6h-sic substrates by mocvd. the 2-in. diameter gan hemt wafer exhibited a low average sheet resistance of 261.9 omega/square, with the resistance un-uniformity as low as 2.23%. atomic force microscopy measurements revealed a smooth algan surface whose root-mean-square roughness is 0.281 nm for a scan area of 5 x 5 mu m. for the single-cell hemts device of 2.5-mm gate width fabricated using the materials, a maximum drain current density of 1.31 a/mm, an extrinsic transconductance of 450 ms/mm, a current gain cutoff frequency of 24 ghz and a maximum frequency of oscillation 54 ghz were achieved. the four-cell internally-matched gan hemts device with 10-mm total gate width demonstrated a very high output power of 45.2 w at 8 ghz under the condition of continuous-wave (cw), with a power added efficiency of 32.0% and power gain of 6.2 db. to our best knowledge, the achieved output power of internally-matched devices are the state-of-the-art result ever reported for x-band gan-based hemts. crown copyright (c) 2009 published by elsevier ltd. all rights reserved.
学科主题	半导体材料
收录类别	SCI
资助信息	knowledge innovation engineering of chinese academy of sciences yyyj-0701-02 national nature sciences foundation of china 60576046 60606002state key development program for basic research of china 2006cb604905 513270605this work was supported by the knowledge innovation engineering of chinese academy of sciences (no. yyyj-0701-02): the national nature sciences foundation of china (nos. 60576046, 60606002); and the state key development program for basic research of china (nos. 2006cb604905 and 513270605).
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7265]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang ML,Hou QF. An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application[J]. solid-state electronics,2009,53(3):332-335.
APA	Zhang ML,&Hou QF.(2009).An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application.solid-state electronics,53(3),332-335.
MLA	Zhang ML,et al."An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application".solid-state electronics 53.3(2009):332-335.