GaN grown with InGaN as a weakly bonded layer

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	GaN grown with InGaN as a weakly bonded layer
	Wei HY; Song HP
刊名	crystengcomm
	2011
卷号	13 期号:5 页码:1580-1585
关键词	CHEMICAL-VAPOR-DEPOSITION SI(001) SUBSTRATE STRAIN EPITAXY
ISSN号	1466-8033
通讯作者	xu, xq, chinese acad sci, key lab semicond mat sci, inst semicond, pob 912, beijing 100083, peoples r china. xxq@semi.ac.cn ; xlliu@semi.ac.cn ; qszhu@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	national science foundation of china [60776015, 60976008]; (973 program) of china [2006cb604907]; 863 high technology r&d program of china [2007aa03z402, 2007aa03z451]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	gan thin films were grown with ingan as an interlayer. the gan films show different stress states with and without an ingan interlayer. the influence of the in composition in ingan on the properties of the high temperature (ht) gan overlayer was discussed and potential stress-free points were extrapolated. the effect of h-2 on the growth of ht gan was found to be that it assisted the decomposition of ingan. a nearly stress free gan single-crystalline film with mirror-like morphology and single polarity was obtained by inserting an appropriate ingan interlayer and the growth mechanism of gan, with a regular network as the template, was discussed. our research on the controllable growth of high-quality gan thin film is very important for gan-based optoelectronic and electronic devices.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21287]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Wei HY,Song HP. GaN grown with InGaN as a weakly bonded layer[J]. crystengcomm,2011,13(5):1580-1585.
APA	Wei HY,&Song HP.(2011).GaN grown with InGaN as a weakly bonded layer.crystengcomm,13(5),1580-1585.
MLA	Wei HY,et al."GaN grown with InGaN as a weakly bonded layer".crystengcomm 13.5(2011):1580-1585.