Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode

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	Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
	Wang, XH ; Wang, XL ; Xiao, HL ; Feng, C ; Wang, XY ; Wang, BZ ; Yang, CB ; Wang, JX ; Wang, CM ; Ran, JX ; Hu, GX ; Li, JM
	2008
会议名称	34th international symposium on compound semiconductors
会议日期	oct 15-18, 2007
会议地点	kyoto, japan
关键词	GAS SENSORS HEMT STRUCTURES MOBILITY TEMPERATURE TRANSISTORS GROWTH MOCVD LAYER
页码	vol 5,no 9,5 (9): 2979-2981
通讯作者	wang, xl, chinese acad sci, inst semicond, novel mat lab, pob 912, beijing 100083, peoples r china.
中文摘要	in this paper, platinum (pt) with a thickness of 45 nm was sputtered on the surface of algan/gan heterostructure to form the schottky contact and the back-to-back schottky diodes were characterized for h-2 sensing at room temperature. both the forward and reverse current of the devices increased with exposure to h-2 gas, which was attributed to schottky barrier height reduction caused by hydrogen absorption in the catalytic metals. a shift of 0.7 v at 297 k was obtained at a fixed forward current of 0.1 ma after switching from n-2 to 40% h-2 in n-2. the sensor's responses under different concentrations from 2500 ppm h-2 to 40% h-2 in n-2 at 297 k were investigated. time response of the sensor at a fixed bias of 1 v was given. finally, the decrease of the schottky barrier height and the sensitivity of the sensor were calculated. (c) 2008 wiley-vch verlag gmbh & co. kgaa, weinheim.
英文摘要	in this paper, platinum (pt) with a thickness of 45 nm was sputtered on the surface of algan/gan heterostructure to form the schottky contact and the back-to-back schottky diodes were characterized for h-2 sensing at room temperature. both the forward and reverse current of the devices increased with exposure to h-2 gas, which was attributed to schottky barrier height reduction caused by hydrogen absorption in the catalytic metals. a shift of 0.7 v at 297 k was obtained at a fixed forward current of 0.1 ma after switching from n-2 to 40% h-2 in n-2. the sensor's responses under different concentrations from 2500 ppm h-2 to 40% h-2 in n-2 at 297 k were investigated. time response of the sensor at a fixed bias of 1 v was given. finally, the decrease of the schottky barrier height and the sensitivity of the sensor were calculated. (c) 2008 wiley-vch verlag gmbh & co. kgaa, weinheim.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t02:11:52z (gmt). no. of bitstreams: 1 654.pdf: 223093 bytes, checksum: 40969baf62ff18d3a8d70e956891c814 (md5) previous issue date: 2008; [wang, xinhua; wang, xiaoliang; xiao, hongling; feng, chun; wang, xiaoyan; wang, baozhu; yang, cuibai; wang, junxi; wang, cuimei; ran, junxue; hu, guoxin; li, jinmin] chinese acad sci, inst semicond, novel mat lab, beijing 100083, peoples r china
收录类别	CPCI-S
会议录	physica status solidi c - current topics in solid state physics
会议录出版者	wiley-v c h verlag gmbh ; pappelallee 3, w-69469 weinheim, germany
会议录出版地	pappelallee 3, w-69469 weinheim, germany
学科主题	半导体材料
语种	英语
ISSN号	1610-1634
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/7764]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang, XH,Wang, XL,Xiao, HL,et al. Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode[C]. 见:34th international symposium on compound semiconductors. kyoto, japan. oct 15-18, 2007.