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科研机构
半导体研究所 [40]
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期刊论文 [34]
会议论文 [6]
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2011 [2]
2010 [1]
2009 [1]
2008 [3]
2007 [3]
2006 [2]
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半导体材料 [40]
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The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD
期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:
Song HP
;
Shi K
;
Sang L
;
Wei HY
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  |  
浏览/下载:58/3
  |  
提交时间:2011/07/05
Metal organic chemical vapor deposition
Sapphire
Zinc compounds
Semiconducting II-VI materials
VAPOR-PHASE EPITAXY
OPTICAL-PROPERTIES
ZNO NANORODS
RAMAN-SCATTERING
M-PLANE
FILMS
PHOTOLUMINESCENCE
DEPOSITION
NANOWIRES
FIELDS
Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate
期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 6, 页码: article no.68502
Wu M
;
Zeng YP
;
Wang JX
;
Hu Q
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  |  
浏览/下载:49/2
  |  
提交时间:2011/07/05
LIGHT-EMITTING-DIODES
ULTRAVIOLET
GROWTH
Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy
期刊论文
journal of crystal growth, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495
Zhao J (Zhao Jie)
;
Zeng YP (Zeng Yiping)
;
Liu C (Liu Chao)
;
Li YB (Li Yanbo)
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  |  
浏览/下载:148/33
  |  
提交时间:2010/06/04
Reflection high-energy electron diffraction
Atomic force microscopy
Molecular beam epitaxy
Zinc compounds
Semiconducting II-VI materials
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer
会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Zhao, YM
;
Sun, GS
;
Liu, XF
;
Li, JY
;
Zhao, WS
;
Wang, L
;
Li, JM
;
Zeng, YP
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  |  
浏览/下载:54/0
  |  
提交时间:2010/03/09
Silicon Carbide
Aluminum Nitride
buffer layer
LPCVD
The growth temperatures dependence of optical and electrical properties of InN films
期刊论文
science in china series g-physics mechanics & astronomy, 2008, 卷号: 51, 期号: 3, 页码: 237-242
Liu, B
;
Zhang, R
;
Xie, ZL
;
Xiu, XQ
;
Li, L
;
Kong, JY
;
Yu, HQ
;
Han, P
;
Gu, SL
;
Shi, Y
;
Zheng, YD
;
Tang, CG
;
Chen, YH
;
Wang, ZG
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  |  
浏览/下载:48/2
  |  
提交时间:2010/03/08
metalorganic chemical vapor deposition
X-ray diffraction
photoluminescence
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD
会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Tang, J
;
Wang, XL
;
Xiao, HL
;
Ran, JX
;
Wang, CM
;
Wang, XY
;
Hu, GX
;
Li, JM
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  |  
浏览/下载:46/0
  |  
提交时间:2010/03/09
PERFORMANCE
HETEROSTRUCTURES
OPTIMIZATION
MOBILITY
AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD
会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
作者:
Hou QF
;
Zhang ML
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  |  
浏览/下载:52/0
  |  
提交时间:2010/03/09
ALGAN/GAN HEMTS
The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates
期刊论文
chinese physics, 2007, 卷号: 16, 期号: 5, 页码: 1467-1471
Liu Z (Liu Zhe)
;
Wang XL (Wang Xiao-Liang)
;
Wang JX (Wang Jun-Xi)
;
Hu GX (Hu Guo-Xin)
;
Guo LC (Guo Lun-Chun)
;
Li JM (Li Jin-Min)
收藏
  |  
浏览/下载:56/0
  |  
提交时间:2010/03/29
GaN
Study on mechanical properties of GaN epitaxy films grown on sapphire by MOCVD
期刊论文
rare metal materials and engineering, 2007, 卷号: 36, 期号: 3, 页码: 416-419
Wei TB (Wei Tongbo)
;
Wang JX (Wang Junxi)
;
Li JM (Li Jinmin)
;
Liu Z (Liu Zhe)
;
Duan RF (Duan Ruifei)
收藏
  |  
浏览/下载:50/0
  |  
提交时间:2010/03/29
GaN
Growth of a novel periodic structure of SiC/AlN multilayers by low pressure chemical vapour deposition
期刊论文
chinese physics letters, 2007, 卷号: 24, 期号: 6, 页码: 1753-1755
Zhao YM (Zhao Yong-Mei)
;
Sun GS (Sun Guo-Sheng)
;
Li JY (Li Jia-Ye)
;
Liu XF (Liu Xing-Fang)
;
Wang L (Wang Lei)
;
Zhao WS (Zhao Wan-Shun)
;
Li JM (Li Jin-Min)
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2010/03/29
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