The growth temperatures dependence of optical and electrical properties of InN films

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	The growth temperatures dependence of optical and electrical properties of InN films
	Liu, B ; Zhang, R ; Xie, ZL ; Xiu, XQ ; Li, L ; Kong, JY ; Yu, HQ ; Han, P ; Gu, SL ; Shi, Y ; Zheng, YD ; Tang, CG ; Chen, YH ; Wang, ZG
刊名	science in china series g-physics mechanics & astronomy
	2008
卷号	51 期号:3 页码:237-242
关键词	metalorganic chemical vapor deposition X-ray diffraction photoluminescence
ISSN号	1672-1799
通讯作者	zhang, r, nanjing univ, jiangsu prov key lab adv photon & elect mat, nanjing 210093, peoples r china. 电子邮箱地址: rzhang@nju.edu.cn
中文摘要	inn films grown on sapphire at different substrate temperatures from 550 degrees c to 700 degrees c by metalorganic chemical vapor deposition were investigated. the low-temperature gan nucleation layer with high-temperature annealing (1100 degrees c) was used as a buffer for main inn layer growth. x-ray diffraction and raman scattering measurements reveal that the quality of inn films can be improved by increasing the growth temperature to 600 degrees c. further high substrate temperatures may promote the thermal decomposition of inn films and result in poor crystallinity and surface morphology. the photoluminescence and hall measurements were employed to characterize the optical and electrical properties of inn films, which also indicates strong growth temperature dependence. the inn films grown at temperature of 600 degrees c show not only a high mobility with low carrier concentration, but also a strong infrared emission band located around 0.7 ev. for a 600 nm thick inn film grown at 600 degrees c, the hall mobility achieves up to 938 cm(2)/vs with electron concentration of 3.9 x 10(18) cm(-3).
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6818]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu, B,Zhang, R,Xie, ZL,et al. The growth temperatures dependence of optical and electrical properties of InN films[J]. science in china series g-physics mechanics & astronomy,2008,51(3):237-242.
APA	Liu, B.,Zhang, R.,Xie, ZL.,Xiu, XQ.,Li, L.,...&Wang, ZG.(2008).The growth temperatures dependence of optical and electrical properties of InN films.science in china series g-physics mechanics & astronomy,51(3),237-242.
MLA	Liu, B,et al."The growth temperatures dependence of optical and electrical properties of InN films".science in china series g-physics mechanics & astronomy 51.3(2008):237-242.