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	Growth of a novel periodic structure of SiC/AlN multilayers by low pressure chemical vapour deposition
	Zhao YM (Zhao Yong-Mei) ; Sun GS (Sun Guo-Sheng) ; Li JY (Li Jia-Ye) ; Liu XF (Liu Xing-Fang) ; Wang L (Wang Lei) ; Zhao WS (Zhao Wan-Shun) ; Li JM (Li Jin-Min)
刊名	chinese physics letters
	2007
卷号	24期号:6页码:1753-1755
关键词	SUBSTRATE
ISSN号	issn: 0256-307x
通讯作者	zhao, ym, chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china. 电子邮箱地址: ymzhao@semi.ac.cn
中文摘要	a novel 10-period sic/aln multilayered structure with a sic cap layer is prepared by low pressure chemical vapour deposition (lpcvd). the structure with total film thickness of about 1.45 mu m is deposited on a si (111) substrate and shows good surface morphology with a smaller rms surface roughness of 5.3 nm. according to the secondary ion mass spectroscopy results, good interface of the 10 period sic/aln structure and periodic changes of depth profiles of c, si, al, n components are obtained by controlling the growth procedure. the structure exhibits the peak reflectivity close to 30% near the wavelength of 322 nm. to the best of our knowledge, this is the first report of growth of the sic/aln periodic structure using the home-made lpcvd system.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9484]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao YM ,Sun GS ,Li JY ,et al. Growth of a novel periodic structure of SiC/AlN multilayers by low pressure chemical vapour deposition[J]. chinese physics letters,2007,24(6):1753-1755.
APA	Zhao YM .,Sun GS .,Li JY .,Liu XF .,Wang L .,...&Li JM .(2007).Growth of a novel periodic structure of SiC/AlN multilayers by low pressure chemical vapour deposition.chinese physics letters,24(6),1753-1755.
MLA	Zhao YM ,et al."Growth of a novel periodic structure of SiC/AlN multilayers by low pressure chemical vapour deposition".chinese physics letters 24.6(2007):1753-1755.

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