The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates
	Liu Z (Liu Zhe) ; Wang XL (Wang Xiao-Liang) ; Wang JX (Wang Jun-Xi) ; Hu GX (Hu Guo-Xin) ; Guo LC (Guo Lun-Chun) ; Li JM (Li Jin-Min)
刊名	chinese physics
	2007
卷号	16 期号:5 页码:1467-1471
关键词	GaN
ISSN号	issn: 1009-1963
通讯作者	liu, z, chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china. 电子邮箱地址: liuzhe@red.semi.ac.cn
中文摘要	aln/gan superlattice buffer is inserted between gan epitaxial layer and si substrate before epitaxial growth of gan layer. high-quality and crack-free gan epitaxial layers can be obtained by inserting aln/gan superlattice buffer layer. the influence of aln/gan superlattice buffer layer on the properties of gan films are investigated in this paper. one of the important roles of the superlattice is to release tensile strain between si substrate and epilayer. raman spectra show a substantial decrease of in-plane tensile strain in gan layers by using aln/gan superlattice buffer layer. moreover, tem cross-sectional images show that the densities of both screw and edge dislocations are significantly reduced. the gan films grown on si with the superlattice buffer also have better surface morphology and optical properties.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9458]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu Z ,Wang XL ,Wang JX ,et al. The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates[J]. chinese physics,2007,16(5):1467-1471.
APA	Liu Z ,Wang XL ,Wang JX ,Hu GX ,Guo LC ,&Li JM .(2007).The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates.chinese physics,16(5),1467-1471.
MLA	Liu Z ,et al."The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates".chinese physics 16.5(2007):1467-1471.