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科研机构
半导体研究所 [20]
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期刊论文 [17]
会议论文 [3]
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2013 [1]
2011 [1]
2006 [2]
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2003 [2]
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半导体材料 [20]
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Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting
期刊论文
journal of semiconductors, 2013, 卷号: 34, 期号: 6, 页码: 063001
Wang Xiyuan,Huang Yongguang,Liu Dewei,Zhu Xiaoning,Cui Xiao and Zhu Hongliang
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浏览/下载:20/0
  |  
提交时间:2014/05/08
Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 7, 页码: 72002
Wu, Hailei
;
Sun, Guosheng
;
Yang, Ting
;
Yan, Guoguo
;
Wang, Lei
;
Zhao, Wanshun
;
Liu, Xingfang
;
Zeng, Yiping
;
Wen, Jialiang
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浏览/下载:28/0
  |  
提交时间:2012/06/14
Aluminum
Annealing
Ion implantation
Pressure effects
Semiconducting silicon compounds
Silicon carbide
Surface roughness
Nanoinstabilities as revealed by shrinkage of nanocavities in silicon during irradiation
期刊论文
international journal of nanotechnology, 2006, 卷号: 3, 期号: 4 sp.iss.si, 页码: 492-516
Zhu, XF (Zhu, Xianfang)
;
Wang, ZG (Wang, Zhanguo)
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浏览/下载:60/0
  |  
提交时间:2010/03/29
nanocavity
nanoparticle
nanoinstabilities
open volume defect
thermodynamic nonequilibrium
nanosize
nanotime
energetic beam irradiation
amorphous structure
nanocurvature
surface energy
WALLED CARBON NANOTUBES
AMORPHOUS-SILICON
ION IRRADIATION
PREFERENTIAL AMORPHIZATION
IN-SITU
INSTABILITY
BEAM
IMPLANTATION
CAVITIES
POINT
Photoluminescence from C+ ion-implanted and electrochemical etched Si layers
期刊论文
applied surface science, 2006, 卷号: 252, 期号: 24, 页码: 8424-8427
Shi LW (Shi Liwei)
;
Wang Q (Wang Qiang)
;
Li YG (Li Yuguo)
;
Xue CS (Xue Chengshan)
;
Zhuang HZ (Zhuang Huizhao)
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浏览/下载:34/0
  |  
提交时间:2010/04/11
ion implantation
annealing
chemical etching
photoluminescence
POROUS SILICON
LUMINESCENCE
Investigation of Mn-implanted n-Si by low-energy ion beam deposition
期刊论文
journal of crystal growth, 2005, 卷号: 273, 期号: 3-4, 页码: 458-463
作者:
Yin ZG
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  |  
浏览/下载:47/0
  |  
提交时间:2010/03/17
auger electron spectroscopy
Silicon-on-insulating multi-layers for total-dose irradiation hardness
期刊论文
chinese physics letters, 2004, 卷号: 21, 期号: 8, 页码: 1600-1603
Zhang EX
;
Yi WB
;
Liu XH
;
Chen M
;
Liu ZL
;
Xi W
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浏览/下载:379/54
  |  
提交时间:2010/03/09
IMPLANTATION
Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing
期刊论文
semiconductor science and technology, 2004, 卷号: 19, 期号: 5, 页码: 571-573
Yi WB
;
Zhang EX
;
Chen M
;
Li N
;
Zhang GQ
;
Liu ZL
;
Wang X
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  |  
浏览/下载:179/57
  |  
提交时间:2010/03/09
LAYERS
Annealing and activation of silicon implanted in semi-insulating InP substrates
期刊论文
materials science in semiconductor processing, 2003, 卷号: 6, 期号: 4, 页码: 215-218
Dong HW
;
Zhao YW
;
Li JM
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浏览/下载:48/0
  |  
提交时间:2010/08/12
semi-insulating InP
ion implantation
silicon
annealing
activation
SI+-IMPLANTATION
PHOSPHIDE VAPOR
UNDOPED INP
FE
WAFERS
UNIFORMITY
PRESSURE
Nano-layer structure of silicon-on-insulator materials
会议论文
11th seoul international symposium on the physics of semiconductors and applications, seoul, south korea, aug 20-23, 2002
Wang X
;
Chen M
;
Chen J
;
Wang X
;
Dong YN
;
Liu XH
;
He P
;
Tian LL
;
Liu ZL
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/11/15
SOI
nanostructure
microelectronic materials
Space-grown SI-GaAs and its application
会议论文
12th international semicoducting and insulating materials conference (simc-xii2002), smolenice, slovakia, jun 30-jul 05, 2002
Chen NF
;
Zhong XG
;
Zhang M
;
Lin LY
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  |  
浏览/下载:14/0
  |  
提交时间:2010/10/29
SEMIINSULATING GALLIUM-ARSENIDE
FLOATING-ZONE GROWTH
CRYSTAL-GROWTH
ZERO GRAVITY
MICROGRAVITY
SEGREGATION
STOICHIOMETRY
SILICON
DEFECTS
INSB
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