Nano-layer structure of silicon-on-insulator materials

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	Nano-layer structure of silicon-on-insulator materials
	Wang X ; Chen M ; Chen J ; Wang X ; Dong YN ; Liu XH ; He P ; Tian LL ; Liu ZL
	2003
会议名称	11th seoul international symposium on the physics of semiconductors and applications
会议日期	aug 20-23, 2002
会议地点	seoul, south korea
关键词	SOI nanostructure microelectronic materials
页码	s713-s718
通讯作者	chen j chinese acad sci shanghai inst microsyst & informat technol ion beam lab 865 changning rd shanghai 200050 peoples r china.
中文摘要	silicon-on-insulator (soi) has been recognized as a promising semiconductor starting material for ics where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. in the present paper, three novel soi nano-layer structures have been demonstrated. ultra-thin soi has been fabricated by separation by implantation of oxygen (simox) technique at low oxygen ion energy of 45 kev and implantation dosage of 1.81017/cm2. the formed soi layer is uniform with thickness of only 60 nm. this layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, patterned soi nanostructure is illustrated by source and drain on insulator (dsoi) mosfets. the dsoi structure has been formed by selective oxygen ion implantation in simox process. with the patterned soi technology, the floating-body effect and self-heating effect, which occur in the conventional soi devices, are significantly suppressed. in order to improve the total-dose irradiation hardness of soi devices, silicon on insulating multilayers (soim) nano-structure is proposed. the buried insulating multilayers, which are composed of siox and siny layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, electric property investigation shows that the hardness to the total-dose irradiation of soim is remarkably superior to those of the conventional simox soi and the bond-and-etch-back soi.
英文摘要	silicon-on-insulator (soi) has been recognized as a promising semiconductor starting material for ics where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. in the present paper, three novel soi nano-layer structures have been demonstrated. ultra-thin soi has been fabricated by separation by implantation of oxygen (simox) technique at low oxygen ion energy of 45 kev and implantation dosage of 1.81017/cm2. the formed soi layer is uniform with thickness of only 60 nm. this layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, patterned soi nanostructure is illustrated by source and drain on insulator (dsoi) mosfets. the dsoi structure has been formed by selective oxygen ion implantation in simox process. with the patterned soi technology, the floating-body effect and self-heating effect, which occur in the conventional soi devices, are significantly suppressed. in order to improve the total-dose irradiation hardness of soi devices, silicon on insulating multilayers (soim) nano-structure is proposed. the buried insulating multilayers, which are composed of siox and siny layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, electric property investigation shows that the hardness to the total-dose irradiation of soim is remarkably superior to those of the conventional simox soi and the bond-and-etch-back soi.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:06导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:06z (gmt). no. of bitstreams: 1 2823.pdf: 1209701 bytes, checksum: d54c742898cbb36c3ad9be9959bc56ca (md5) previous issue date: 2003; aixtron ag.; epichem inc.; kodenshi auk.; lg electr inst technol.; luxpia co ltd.; natl program tera level nanodevices.; thomas swan sci equipment ltd.; kyung hee univ, adv display res ctr.; sungkyunkwan univ, ctr nanotubes & nanostruct composites.; dongguk univ, quantum funct semiconductor res ctr.; chonbuk natl univ, semiconductor phys res ctr.; chinese acad sci, shanghai inst microsyst & informat technol, ion beam lab, shanghai 200050, peoples r china; tsing hua univ, inst microelect, beijing 100084, peoples r china; chinese acad sci, beijing inst semicond, beijing 100864, peoples r china
收录类别	CPCI-S
会议主办者	aixtron ag.; epichem inc.; kodenshi auk.; lg electr inst technol.; luxpia co ltd.; natl program tera level nanodevices.; thomas swan sci equipment ltd.; kyung hee univ, adv display res ctr.; sungkyunkwan univ, ctr nanotubes & nanostruct composites.; dongguk univ, quantum funct semiconductor res ctr.; chonbuk natl univ, semiconductor phys res ctr.
会议录	journal of the korean physical society, 42
会议录出版者	korean physical soc ; 635-4, yuksam-dong, kangnam-ku, seoul 135-703, south korea
会议录出版地	635-4, yuksam-dong, kangnam-ku, seoul 135-703, south korea
学科主题	半导体材料
语种	英语
ISSN号	0374-4884
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14857]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang X,Chen M,Chen J,et al. Nano-layer structure of silicon-on-insulator materials[C]. 见:11th seoul international symposium on the physics of semiconductors and applications. seoul, south korea. aug 20-23, 2002.