Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing

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	Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing
	Yi WB ; Zhang EX ; Chen M ; Li N ; Zhang GQ ; Liu ZL ; Wang X
刊名	semiconductor science and technology
	2004
卷号	19 期号:5 页码:571-573
关键词	LAYERS
ISSN号	0268-1242
通讯作者	yi, wb, chinese acad sci, shanghai inst microsyst & informat technol, ion beam lab, shanghai 20050, peoples r china.
中文摘要	separation by implantation of oxygen and nitrogen (simon) silicon-on-insulator (soi) materials were fabricated by sequential oxygen and nitrogen implantation with annealing after each implantation. analyses of sims, xtem and hrtem were performed. the results show that superior buried insulating multi-layers were well formed and the possible mechanism is discussed. the remarkable total-dose irradiation tolerance of simon materials was confirmed by few shifts of drain leakage current-gate source voltage (i-v) curves of pmos transistors fabricated on simon materials before and after irradiation.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8068]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yi WB,Zhang EX,Chen M,et al. Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing[J]. semiconductor science and technology,2004,19(5):571-573.
APA	Yi WB.,Zhang EX.,Chen M.,Li N.,Zhang GQ.,...&Wang X.(2004).Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing.semiconductor science and technology,19(5),571-573.
MLA	Yi WB,et al."Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing".semiconductor science and technology 19.5(2004):571-573.