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科研机构
半导体研究所 [10]
内容类型
期刊论文 [8]
会议论文 [2]
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2011 [2]
2010 [1]
2009 [1]
2008 [1]
2006 [3]
2001 [2]
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学科主题
光电子学 [10]
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The contributions of composition and strain to the phonon shift in Ge1-xSnx alloys
期刊论文
solid state communications, 2011, 卷号: 151, 期号: 8, 页码: 647-650
Su SJ
;
Wang W
;
Cheng BW
;
Hu WX
;
Zhang GZ
;
Xue CL
;
Zuo YH
;
Wang QM
收藏
  |  
浏览/下载:64/3
  |  
提交时间:2011/07/05
Semiconductors
Raman scattering
MOLECULAR-BEAM EPITAXY
RAMAN FREQUENCIES
SEMICONDUCTORS
GE(001)2X1
SILICON
SCATTERING
GROWTH
A practical route towards fabricating GaN nanowire arrays
期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Liu, JQ
;
Huang, J
;
Gong, XJ
;
Wang, JF
;
Xu, K
;
Qiu, YX
;
Cai, DM
;
Zhou, TF
;
Ren, GQ
;
Yang, H
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2012/02/06
LIGHT-EMITTING-DIODES
EPITAXIAL LATERAL OVERGROWTH
CHEMICAL-VAPOR-DEPOSITION
WELL NANOROD ARRAYS
ULTRAVIOLET-LIGHT
GROWTH
NANOGENERATORS
DISLOCATIONS
BRIGHTNESS
LAYERS
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells
期刊论文
journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464
作者:
Wang YT
;
Zhao DG
;
Zhang SM
;
Yang H
;
Jiang DS
收藏
  |  
浏览/下载:146/11
  |  
提交时间:2010/04/04
Nitride materials
Crystal growth
X-ray diffraction
TIME-RESOLVED PHOTOLUMINESCENCE
LIGHT-EMITTING-DIODES
PIEZOELECTRIC FIELDS
LASER-DIODES
DEPENDENCE
RECOMBINATION
POLARIZATION
DYNAMICS
GROWTH
MOCVD
Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition
期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 14, 页码: art. no. 145410
作者:
Zhang SM
;
Yang H
;
Yang H
;
Wang YT
;
Zhu JJ
收藏
  |  
浏览/下载:73/0
  |  
提交时间:2010/03/08
MOLECULAR-BEAM EPITAXY
PHASE EPITAXY
QUANTUM DOTS
BAND-GAP
GROWTH
SURFACES
The effect of growth temperature on structural quality of GaN/AlN quantum wells by metal-organic chemical vapour deposition
期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 10, 页码: art. no. 105106
Ma, ZF
;
Zhao, DG
;
Wang, YT
;
Jiang, DS
;
Zhang, SM
;
Zhu, JJ
;
Liu, ZS
;
Sun, BJ
;
Yang, H
;
Liang, JW
收藏
  |  
浏览/下载:51/3
  |  
提交时间:2010/03/08
INTERSUBBAND ABSORPTION
MU-M
ALGAN
GAN
INTERLAYERS
MOVPE
ALN
MQW electroabsorption modulator-integrated DFB laser modules for high-speed transmission
期刊论文
semiconductor science and technology, 2006, 卷号: 21, 期号: 6, 页码: 734-739
作者:
Pan JQ
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  |  
浏览/下载:58/0
  |  
提交时间:2010/04/11
VAPOR-PHASE EPITAXY
MONOLITHIC INTEGRATION
SELECTIVE GROWTH
LAYERS
DIODE
MOVPE
Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition
期刊论文
journal of crystal growth, 2006, 卷号: 289, 期号: 1, 页码: 72-75
作者:
Jiang DS
;
Li XY
;
Zhu JJ
;
Yang H
;
Zhao DG
收藏
  |  
浏览/下载:95/0
  |  
提交时间:2010/04/11
growth rate
parasitic reaction
MOCVD
AlN
GAS-PHASE REACTIONS
MOVPE GROWTH
ALGAN MOVPE
ALXGA1-XN
Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates
期刊论文
journal of applied physics, 2006, 卷号: 100, 期号: 10, 页码: art.no.103503
Liang S (Liang S.)
;
Zhu HL (Zhu H. L.)
;
Wang W (Wang W.)
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2010/04/11
CHEMICAL-VAPOR-DEPOSITION
OPTICAL-PROPERTIES
PHASE-EPITAXY
MU-M
GAAS
SURFACE
GROWTH
MISORIENTATION
FABRICATION
UNIFORMITY
Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Li LH
;
Pan Z
;
Zhang W
;
Lin YW
;
Wang XY
;
Wu RH
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/15
characterization
defects
X-ray diffraction
molecular beam epitaxy
nitrides
GAAS
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Pan Z
;
Li LH
;
Zhang W
;
Wang XU
;
Lin YW
;
Wu RH
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/11/15
adsorption
characterization
radiation
molecular beam epitaxy
nitrides
SURFACE-EMITTING LASER
QUANTUM-WELLS
OPERATION
RANGE
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