Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates

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	Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates
	Liang S (Liang S.) ; Zhu HL (Zhu H. L.) ; Wang W (Wang W.)
刊名	journal of applied physics
	2006
卷号	100 期号:10 页码:art.no.103503
关键词	CHEMICAL-VAPOR-DEPOSITION OPTICAL-PROPERTIES PHASE-EPITAXY MU-M GAAS SURFACE GROWTH MISORIENTATION FABRICATION UNIFORMITY
ISSN号	0021-8979
通讯作者	liang, s, chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china. e-mail: liangsong@red.semi.ac.cn
中文摘要	the effects of growth temperature on the bimodal size distribution of inas quantum dots on vicinal gaas(100) substrates grown by metal organic chemical vapor deposition are studied. an abnormal trend of the bimodal size evolution on temperature is observed. with the increase of the growth temperature, while the density of the large dots decreases continually, that of the small dots first grows larger when temperature was below 520 degrees c, and then exhibits a sudden decrease at 535 degrees c. the trend is explained by taking into account the presence of multiatomic steps on the substrates. photoluminescence (pl) studies show that quantum dots on vicinal substrates have a narrower pl linewidth, a longer emission wavelength, and a larger pl intensity than those of the dots with exact substrates. (c) 2006 american institute of physics.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10252]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liang S ,Zhu HL ,Wang W . Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates[J]. journal of applied physics,2006,100(10):art.no.103503.
APA	Liang S ,Zhu HL ,&Wang W .(2006).Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates.journal of applied physics,100(10),art.no.103503.
MLA	Liang S ,et al."Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates".journal of applied physics 100.10(2006):art.no.103503.