Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy

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	Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy
	Pan Z ; Li LH ; Zhang W ; Wang XU ; Lin YW ; Wu RH
	2001
会议名称	11th international conference on molecular beam epitaxy (mbe-xi)
会议日期	sep 11-15, 2000
会议地点	beijing, peoples r china
关键词	adsorption characterization radiation molecular beam epitaxy nitrides SURFACE-EMITTING LASER QUANTUM-WELLS OPERATION RANGE
页码	516-520
通讯作者	pan z chinese acad sci inst semicond state key lab integrated optoelect pob 912 beijing 100083 peoples r china.
中文摘要	we have studied the growth of gainnas/gaas quantum well (qw) by molecular beam epitaxy using a dc plasma as the n sourer. the n concentration was independent of the as pressure and the in concentration, but inversely proportional to the growth rate. it was almost independent of t, over the range of 400-500 degreesc, but dropped rapidly when t-g exceeded 500 degreesc. thermally-activated n surface segregation is considered to account for the strong falloff of the n concentration. as increasing n concentration, the steep absorption edge of the photovoltage spectra of gainnas/gaas qw became gentle, the full-width at half-maximum of the photoluminescence (pl) peal; increased rapidly, and a so-called s-shaped temperature dependence of pl peak energy showed up. all these were attributed to the increasing localized state as n concentration. ion-induced damage was one of the origins of the localized state. a rapid thermal annealing procedure could effectively remote the localized state. (c) 2001 elsevier science d.v. all rights reserved.
英文摘要	we have studied the growth of gainnas/gaas quantum well (qw) by molecular beam epitaxy using a dc plasma as the n sourer. the n concentration was independent of the as pressure and the in concentration, but inversely proportional to the growth rate. it was almost independent of t, over the range of 400-500 degreesc, but dropped rapidly when t-g exceeded 500 degreesc. thermally-activated n surface segregation is considered to account for the strong falloff of the n concentration. as increasing n concentration, the steep absorption edge of the photovoltage spectra of gainnas/gaas qw became gentle, the full-width at half-maximum of the photoluminescence (pl) peal; increased rapidly, and a so-called s-shaped temperature dependence of pl peak energy showed up. all these were attributed to the increasing localized state as n concentration. ion-induced damage was one of the origins of the localized state. a rapid thermal annealing procedure could effectively remote the localized state. (c) 2001 elsevier science d.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:18导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:18z (gmt). no. of bitstreams: 1 2917.pdf: 127763 bytes, checksum: 72d49fa05be8966172ef0f11bb685b10 (md5) previous issue date: 2001; china natl nat sci fdn.; inst semiconductor, cas.; inst phys, cas.; state key lab funct mat informat.; inst met, cas.; hong kong univ sci & technol.; univ hong kong, lab new mat.; chinese acad sci, lab new mat.; vg semicon.; riber.; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	china natl nat sci fdn.; inst semiconductor, cas.; inst phys, cas.; state key lab funct mat informat.; inst met, cas.; hong kong univ sci & technol.; univ hong kong, lab new mat.; chinese acad sci, lab new mat.; vg semicon.; riber.
会议录	journal of crystal growth, 227
会议录出版者	elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands
会议录出版地	po box 211, 1000 ae amsterdam, netherlands
学科主题	光电子学
语种	英语
ISSN号	0022-0248
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14943]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Pan Z,Li LH,Zhang W,et al. Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy[C]. 见:11th international conference on molecular beam epitaxy (mbe-xi). beijing, peoples r china. sep 11-15, 2000.