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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2019     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Novel metallization processes for sub-100 nm magnetic tunnel junction devices 期刊论文 Microelectronic Engineering, 2019 作者:  Kaihua Cao;  Hushan Cui;  Youguang Zhang;  Huagang Xiong;  Jiaqi Wei 收藏  |  浏览/下载：34/0  |  提交时间：2019/12/17 Side-wall  passivation  Electrode  reveal  process  Magnetic  tunnel  junction  device  Dual  dielectrics   Novel metallization processes for sub-100 nm magnetic tunnel junction devices 期刊论文 Microelectronic Engineering, 2019, 卷号: Vol.209, 页码: 6-9 作者:  Kaihua Cao;  Hushan Cui;  Youguang Zhang;  Huagang Xiong;  Jiaqi Wei 收藏  |  浏览/下载：34/0  |  提交时间：2019/12/17 Side-wall passivation  Electrode reveal process  Magnetic tunnel junction device  Dual dielectrics   Multi-bit nonvolatile flip-flop based on NAND-like spin transfer torque MRAM 会议论文 IEEE/IFIP International Conference on VLSI and System-on-Chip, VLSI-SoC, 2018-10-08 作者:  Deng, E.;  Wang, Z.;  Kang, W.;  Wei, S.;  Zhao, W. 收藏  |  浏览/下载：13/0  |  提交时间：2019/12/30 CMOS integrated circuits  Magnetic devices  Magnetic recording  NAND circuits  Standby power systems  Torque  Tunnel junctions  VLSI circuits  Computing system  Magnetic tunnel junction  Non-volatile flip-flops  Spin orbits  Spin transfer torque  Spintronics device  Switching delay  Switching power  Flip flop circuits   Novel metallization processes for sub-100 nm magnetic tunnel junction devices 期刊论文 MICROELECTRONIC ENGINEERING, 2019, 卷号: 209, 页码: 6-9 作者:  Cao, Kaihua;  Cui, Hushan;  Zhang, Youguang;  Xiong, Huagang;  Wei, Jiaqi 收藏  |  浏览/下载：34/0  |  提交时间：2019/12/30 Side-wall passivation  Electrode reveal process  Magnetic tunnel junction device  Dual dielectrics   Emerging Spintronic Devices: From Ultra-High-Density Memory to Logic-In-Memory 会议论文 Proceedings of 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2018, 2018-11-21 作者:  Zhang, Yue;  Wang, Guanda;  Huang, Zhe;  Zhang, Zhizhong;  Wang, Jinkai 收藏  |  浏览/下载：13/0  |  提交时间：2019/12/30 CMOS integrated circuits  Data storage equipment  Magnetic devices  Metals  MOS devices  Oxide semiconductors  Semiconductor junctions  Spintronics  Tunnel junctions  Complementary metal oxide semiconductors  Logic applications  Logic in memory  Magnetic tunnel junction  Non-volatile memory  Spintronic device  Systematic study  Ultrahigh density  Computer circuits   Compact Model for Negative Capacitance Enhanced Spintronics Devices 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 页码: 2795-2801 作者:  Gao, Tianqi;  Zeng, Lang;  Zhang, Deming;  Zhang, Youguang;  Wang, Kang L. 收藏  |  浏览/下载：9/0  |  提交时间：2019/12/30 All spin logic (ASL) device  compact model  magnetic tunnel junction (MTJ)  negative capacitance (NC) effect  spin transfer torque (STT)  voltage-controlled magnetic anisotropy (VCMA)