QQ客服 官方微博 反馈留言

	Novel metallization processes for sub-100 nm magnetic tunnel junction devices
	Kaihua Cao; Hushan Cui; Youguang Zhang; Huagang Xiong; Jiaqi Wei; Lezhi Wang; Wenlong Cai; Yizheng Liu; Pan Liu; Xiaobin He
刊名	Microelectronic Engineering
	2019
卷号	Vol.209页码:6-9
关键词	Side-wall passivation Electrode reveal process Magnetic tunnel junction device Dual dielectrics
ISSN号	0167-9317
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4745911
专题	湖南大学
作者单位	1.c Institute of Microelectronics of Chinese Academy of Sciences, 100029, PR China a Fert Beijing Institute, BDBC, Beihang University, 100191, PR China 2.School of Electronic and Information Engineering, Beihang University, 100191, PR China
推荐引用方式 GB/T 7714	Kaihua Cao,Hushan Cui,Youguang Zhang,et al. Novel metallization processes for sub-100 nm magnetic tunnel junction devices[J]. Microelectronic Engineering,2019,Vol.209:6-9.
APA	Kaihua Cao.,Hushan Cui.,Youguang Zhang.,Huagang Xiong.,Jiaqi Wei.,...&Weisheng Zhao.(2019).Novel metallization processes for sub-100 nm magnetic tunnel junction devices.Microelectronic Engineering,Vol.209,6-9.
MLA	Kaihua Cao,et al."Novel metallization processes for sub-100 nm magnetic tunnel junction devices".Microelectronic Engineering Vol.209(2019):6-9.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。