×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
北京航空航天大学 [8]
湖南大学 [2]
近代物理研究所 [2]
兰州理工大学 [1]
内容类型
期刊论文 [11]
会议论文 [2]
发表日期
2021 [2]
2019 [6]
2018 [2]
2017 [2]
2016 [1]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共13条,第1-10条
帮助
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
发表日期升序
发表日期降序
提交时间升序
提交时间降序
题名升序
题名降序
作者升序
作者降序
Electron-ion collider in China
期刊论文
FRONTIERS OF PHYSICS, 2021, 卷号: 16, 期号: 6, 页码: 78
作者:
Anderle, Daniele P.
;
Bertone, Valerio
;
Cao, Xu
;
Chang, Lei
;
Chang, Ningbo
收藏
  |  
浏览/下载:81/0
  |  
提交时间:2021/12/08
electron ion collider
nucleon structure
nucleon mass
exotic hadronic states
quantum chromodynamics
3D-tomography
helicity
transverse momentum dependent parton distribution
generalized parton distribution
energy recovery linac
polarization
spin rotator
Electron-ion collider in China
期刊论文
FRONTIERS OF PHYSICS, 2021, 卷号: 16, 期号: 6
作者:
Anderle, Daniele P.
;
Bertone, Valerio
;
Cao, Xu
;
Chang, Lei
;
Chang, Ningbo
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2021/10/14
electron ion collider
nucleon structure
nucleon mass
exotic hadronic states
quantum chromodynamics
3D-tomography
helicity
transverse momentum dependent parton distribution
generalized parton distribution
energy recovery linac
polarization
spin rotator
Novel metallization processes for sub-100 nm magnetic tunnel junction devices
期刊论文
Microelectronic Engineering, 2019
作者:
Kaihua Cao
;
Hushan Cui
;
Youguang Zhang
;
Huagang Xiong
;
Jiaqi Wei
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2019/12/17
Side-wall
passivation
Electrode
reveal
process
Magnetic
tunnel
junction
device
Dual
dielectrics
Novel metallization processes for sub-100 nm magnetic tunnel junction devices
期刊论文
Microelectronic Engineering, 2019, 卷号: Vol.209, 页码: 6-9
作者:
Kaihua Cao
;
Hushan Cui
;
Youguang Zhang
;
Huagang Xiong
;
Jiaqi Wei
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2019/12/17
Side-wall passivation
Electrode reveal process
Magnetic tunnel junction device
Dual dielectrics
Low-Temperature Performance of Nanoscale Perpendicular Magnetic Tunnel Junctions With Double MgO-Interface Free Layer
期刊论文
IEEE TRANSACTIONS ON MAGNETICS, 2019, 卷号: 55
作者:
Cao, Kaihua
;
Li, Huisong
;
Cai, Wenlong
;
Wei, Jiaqi
;
Wang, Lezhi
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2019/12/30
Perpendicular magnetic tunnel junction (p-MTJ)
spin transfer torque (STT)
spintronics
temperature dependence
Novel metallization processes for sub-100 nm magnetic tunnel junction devices
期刊论文
MICROELECTRONIC ENGINEERING, 2019, 卷号: 209, 页码: 6-9
作者:
Cao, Kaihua
;
Cui, Hushan
;
Zhang, Youguang
;
Xiong, Huagang
;
Wei, Jiaqi
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2019/12/30
Side-wall passivation
Electrode reveal process
Magnetic tunnel junction device
Dual dielectrics
All Perpendicular Spin Nano-Oscillators with Composite Free Layer
期刊论文
SPIN, 2019, 卷号: 9
作者:
Wei, Jiaqi
;
Cao, Kaihua
;
Cui, Hushan
;
Shi, Kewen
;
Cai, Wenlong
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/12/30
Perpendicular magnetic anisotropy
spin transfer torque nano-oscillator
internet of things
Miniaturization of CMOS
期刊论文
MICROMACHINES, 2019, 卷号: 10
作者:
Radamson, Henry H.
;
He, Xiaobin
;
Zhang, Qingzhu
;
Liu, Jinbiao
;
Cui, Hushan
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2019/12/30
FinFETs
CMOS
device processing
integrated circuits
Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 页码: 1700461
作者:
Zhang, Yu
;
Lin, Xiaoyang
;
Adam, Jean-Paul
;
Agnus, Guillaume
;
Kang, Wang
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/12/30
heterogeneous device
magnetic tunnel junction
resistive switching
silicon filaments
spintronics
In-memory direct processing based on nanoscale perpendicular magnetic tunnel junctions
期刊论文
NANOSCALE, 2018, 卷号: 10, 页码: 21225-21230
作者:
Cao, Kaihua
;
Cai, Wenlong
;
Liu, Yizheng
;
Li, Huisong
;
Wei, Jiaqi
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/30
©版权所有 ©2017 CSpace - Powered by
CSpace