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	Novel metallization processes for sub-100 nm magnetic tunnel junction devices
	Cao, Kaihua; Cui, Hushan; Zhang, Youguang; Xiong, Huagang; Wei, Jiaqi; Wang, Lezhi; Cai, Wenlong; Liu, Yizheng; Liu, Pan; He, Xiaobin
刊名	MICROELECTRONIC ENGINEERING
	2019
卷号	209页码:6-9
关键词	Side-wall passivation Electrode reveal process Magnetic tunnel junction device Dual dielectrics
ISSN号	0167-9317
DOI	10.1016/j.mee.2019.01.010
URL标识	查看原文
收录类别	SCIE ; EI
WOS记录号	WOS:000465058900002
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5921172
专题	北京航空航天大学
推荐引用方式 GB/T 7714	Cao, Kaihua,Cui, Hushan,Zhang, Youguang,et al. Novel metallization processes for sub-100 nm magnetic tunnel junction devices[J]. MICROELECTRONIC ENGINEERING,2019,209:6-9.
APA	Cao, Kaihua.,Cui, Hushan.,Zhang, Youguang.,Xiong, Huagang.,Wei, Jiaqi.,...&Zhao, Weisheng.(2019).Novel metallization processes for sub-100 nm magnetic tunnel junction devices.MICROELECTRONIC ENGINEERING,209,6-9.
MLA	Cao, Kaihua,et al."Novel metallization processes for sub-100 nm magnetic tunnel junction devices".MICROELECTRONIC ENGINEERING 209(2019):6-9.

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