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安徽大学 [4]
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期刊论文 [10]
会议论文 [1]
发表日期
2018 [11]
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High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:
Yang YM(杨育梅)
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浏览/下载:8/0
  |  
提交时间:2020/11/13
Ballistics
Dielectric materials
Drain current
Gate dielectrics
MOSFET devices
Poisson equation
Shims
Direct current performance
High- k
junctionless
Junctionless transistors
Non-equilibrium green functions
Nonequilibrium green function formalisms
Quantum simulators
Subthreshold characteristics
High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:
Yang, Yumei
;
Lou, Haijun
;
Lin, Xinnan
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  |  
浏览/下载:10/0
  |  
提交时间:2019/11/15
High-k spacer
junctionless
nonequilibrium Green function (NEGF)
quantum simulator
Organic Field-Effect Transistor for Energy-Related Applications: Low-Power-Consumption Devices, Near-Infrared Phototransistors, and Organic Thermoelectric Devices
期刊论文
ADVANCED ENERGY MATERIALS, 2018, 卷号: 8, 期号: 24
作者:
Ren, Xiaochen
;
Yang, Fangxu
;
Gao, Xiong
;
Cheng, Shanshan
;
Zhang, Xiaotao
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  |  
浏览/下载:50/0
  |  
提交时间:2019/04/09
High-k Dielectrics
Nir Phototransistors
Organic Field-effect Transistors
Organic Thermoelectrics
Subthreshold Swing
Performance Enhancement for Charge Trapping Memory by Using Al2O3/HfO2/Al2O3 Tri-Layer High-k Dielectrics and High Work Function Metal Gate
期刊论文
ECS Journal of Solid State Science and Technology, 2018
作者:
Hou CZ(侯朝昭)
;
Wu ZH(吴振华)
;
Yin HX(殷华湘)
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  |  
浏览/下载:23/0
  |  
提交时间:2019/05/05
Polymer/Silicon Nanoparticle Hybrid Layer as High-k Dielectrics in Organic Thin-Film Transistors
期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 卷号: 122, 期号: 21, 页码: 11214-11221
作者:
Wang, Xuesong
;
Wang, He
;
Li, Yao
;
Shi, Zuosen
;
Yan, Donghang
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  |  
浏览/下载:44/0
  |  
提交时间:2019/04/09
Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2O3 Passivation Layer and Forming Gas Annealing
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 4, 页码: 9
作者:
Jiang, Shanshan
;
He, Gang
;
Liu, Mao
;
Zhu, Li
;
Liang, Shuang
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  |  
浏览/下载:66/0
  |  
提交时间:2019/06/10
electrical properties
forming gas annealing
high-k gate dielectrics
interface chemistry
metal-oxide-semiconductor capacitors
The total ionizing dose effect on SiO2 and new high-k gate dielectrics under gamma-ray irradiation
会议论文
作者:
Ding, Man
;
Cheng, Yonghong
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浏览/下载:13/0
  |  
提交时间:2019/11/19
Equivalent oxide thickness
Gamma irradiation
Gamma-ray irradiation
Interface trapped charges
Silicon dangling bond
Thermally oxidized
Total ionizing dose effects
Trapping efficiencies
Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics
期刊论文
RSC Advances, 2018, 卷号: Vol.8 No.30, 页码: 16788-16799
作者:
Jianguo Lv
;
Li Zhu
;
Elvira Fortunato
;
Gang He
;
Rodrigo Martins
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  |  
浏览/下载:10/0
  |  
提交时间:2019/04/22
Analysis of the electrical properties and current transportation mechanism of a metal oxide semiconductor (MOS) capacitor based on HfGdO gate dielectrics
期刊论文
Journal of Alloys and Compounds, 2018, 卷号: Vol.757, 页码: 288-297
作者:
J.G. Lv
;
Y.M. Liu
;
P.H. Wang
;
S.S. Jiang
;
G. He
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/22
High-k
gate
dielectrics
HfGdO
Electrical
properties
Metal
oxide
semiconductor
transistors
Leakage
current
density
Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD‐Derived Al2O3 Passivation Layer and Forming Gas Annealing
期刊论文
Advanced Electronic Materials, 2018, 卷号: Vol.4 No.4
作者:
Wendong Li
;
Shuang Liang
;
Li Zhu
;
Mao Liu
;
Mingliang Tian
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2019/04/22
electrical
properties
forming
gas
annealing
high‐k
gate
dielectrics
interface
chemistry
metal‐oxide‐semiconductor
capacitors
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