| The total ionizing dose effect on SiO2 and new high-k gate dielectrics under gamma-ray irradiation | |
| Ding, Man; Cheng, Yonghong | |
| 2018 | |
| 关键词 | Equivalent oxide thickness Gamma irradiation Gamma-ray irradiation Interface trapped charges Silicon dangling bond Thermally oxidized Total ionizing dose effects Trapping efficiencies |
| 卷号 | 2018-May |
| 页码 | 906-909 |
| 会议录 | Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials
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| URL标识 | 查看原文 |
| ISSN号 | 9781538657881 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2829926 |
| 专题 | 西安交通大学 |
| 推荐引用方式 GB/T 7714 | Ding, Man,Cheng, Yonghong. The total ionizing dose effect on SiO2 and new high-k gate dielectrics under gamma-ray irradiation[C]. 见:. |
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