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	Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics
	Jianguo Lv; Li Zhu; Elvira Fortunato; Gang He; Rodrigo Martins
刊名	RSC Advances
	2018
卷号	Vol.8 No.30页码:16788-16799
ISSN号	2046-2069
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2158863
专题	安徽大学
作者单位	1.a School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230039, P. R. China E-mail: hegang@ahu.edu.cn 2.Department of Materials Science/CENIMAT-I3N, Faculty of Sciences and Technology, New University of Lisbon, CEMOP-UNINOVA, Campus de Caparica 2829-516 Caparica, Portugal 3.Department of Physics and Electronic Engineering, Hefei Normal University, Hefei 230061, P. R. China 4.Corresponding authors
推荐引用方式 GB/T 7714	Jianguo Lv,Li Zhu,Elvira Fortunato,et al. Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics[J]. RSC Advances,2018,Vol.8 No.30:16788-16799.
APA	Jianguo Lv,Li Zhu,Elvira Fortunato,Gang He,&Rodrigo Martins.(2018).Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics.RSC Advances,Vol.8 No.30,16788-16799.
MLA	Jianguo Lv,et al."Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics".RSC Advances Vol.8 No.30(2018):16788-16799.

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