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新疆理化技术研究所 [5]
清华大学 [3]
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期刊论文 [12]
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浏览/检索结果:
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Impact of High TID Irradiation on Stability of 65 nm SRAM Cells
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 卷号: 69, 期号: 5, 页码: 1044-1050
作者:
Cui, JW (Cui, Jiangwei) [1]
;
Zheng, QW (Zheng, Qiwen) [1]
;
Li, YD (Li, Yudong) [1]
;
Guo, Q (Guo, Qi) [1]
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2022/06/21
SRAM cells
Radiation effects
Arrays
Stability criteria
Circuit stability
Voltage measurement
Logic gates
Stability
static random-access memory (SRAM) cell
total ionizing dose (TID)
Total Ionizing Dose Effects of the Color Complementary Metal Oxide Semiconductor (CMOS) Image Sensor at Different Bias
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2022, 卷号: 17, 期号: 1, 页码: 121-127
作者:
Yang, ZK (Yang, Zhikang) [1] , [2]
;
Wen, L (Wen, Lin) [1]
;
Li, YD (Li, Yudong) [1]
;
Liu, BK (Liu, Bingkai) [1] , [2]
;
Fu, J (Fu, Jing) [1] , [2]
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2022/06/21
Color CMOS Image Sensor
Radiation Damage
Total Ionizing Dose Effects
Bias Condition
Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 页码: 710-715
作者:
Shu, Lei
;
Wang, Liang
;
Zhou, Xin
;
Li, Tong-De
;
Yuan, Zhang-Yi'an
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/12/30
400-V silicon-on-insulator (SOI) n-channel laterally diffused metal-oxide-semiconductor field-effect transistor (NLDMOSFET)
BVDS variations
laterally diffused metal-oxide-semiconductor (LDMOS)
radiation effects
SOI
technology computer-aided design (TCAD) simulations
total ionizing dose (TID)
Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor
期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-10
作者:
Zhang, JX (Zhang, Jin-Xin)[ 1 ]
;
Guo, HX (Guo, Hong-Xia)[ 2,3 ]
;
Pan, XY (Pan, Xiao-Yu)[ 3 ]
;
Guo, Q (Guo, Qi)[ 2 ]
;
Zhang, FQ (Zhang, Feng-Qi)[ 3 ]
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2018/11/20
Sige Hbt
Synergistic Effect
Single Event Effects
Total Ionizing Dose
Effects of recording time and residue on dose-response by LiMgPO4: Tb, B ceramic disc synthesized via improved sintering process
期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2018, 卷号: 422, 期号: 5, 页码: 2018-12-17
作者:
Kong, XR (Kong, Xirui)
;
Fu, ZL (Fu, Zhilong)
;
Que, HY (Que, Huiying)
;
Fan, YW (Fan, Yanwei)
;
Chen, ZY (Chen, Zhaoyang)
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2018/07/20
Limgpo4
Ceramic Disc
Tb
Osl
b
Recording Time
Bleaching Time
Total-ionizing Dose Effects
The total ionizing dose effect on SiO2 and new high-k gate dielectrics under gamma-ray irradiation
会议论文
作者:
Ding, Man
;
Cheng, Yonghong
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  |  
浏览/下载:13/0
  |  
提交时间:2019/11/19
Equivalent oxide thickness
Gamma irradiation
Gamma-ray irradiation
Interface trapped charges
Silicon dangling bond
Thermally oxidized
Total ionizing dose effects
Trapping efficiencies
Study of Total-Ionizing-Dose Effects on a Single-Event-Hardened Phase-Locked Loop
期刊论文
IEEE Transactions on Nuclear Science, 2018, 卷号: Vol.65 No.4, 页码: 997-1004
作者:
Zhuojun Chen
;
Ding Ding
;
Yemin Dong
;
Yi Shan
;
Shuxing Zhou
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/12/26
Phase
locked
loops
Radiation
effects
Transistors
MOS
devices
Degradation
Phase
noise
Voltage-controlled
oscillators
Total-ionizing-dose
phase-locked
loop
phase
noise
reference
spur
Total ionizing radiation effects of 2-T SONOS for 130 nm/4 Mb NOR flash memory technology
期刊论文
2016, 2016
QIAO FengYing
;
PAN LiYang
;
YU Xiao
;
MA HaoZhi
;
WU Dong
;
XU Jun
;
QIAO FengYing
;
PAN LiYang
;
YU Xiao
;
MA HaoZhi
;
WU Dong
;
XU Jun
收藏
  |  
浏览/下载:4/0
Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process
期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 7
作者:
Zheng, QW (Zheng Qi-Wen)
;
Cui, JW (Cui Jiang-Wei)
;
Wang, HN (Wang Han-Ning)
;
Zhou, H (Zhou Hang)
;
Yu, DZ (Yu De-Zhao)
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2016/12/12
total ionizing dose effects
deep sub-micron
metal oxide semiconductor field effect transistor
static random access memory
Total-ionizing-dose effects in pixel performance degradation of CMOS image sensors under low dose rate
期刊论文
International Conference on Nuclear Engineering, Proceedings, ICONE, 2015, 卷号: 2015-January
作者:
Xu, Shou-Long
;
Zou, Shu-Liang
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/27
CMOS image sensors
Radiation damage
Total ionizing dose effects
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