Total Ionizing Dose Effects of the Color Complementary Metal Oxide Semiconductor (CMOS) Image Sensor at Different Bias | |
Yang, ZK (Yang, Zhikang) [1] , [2]; Wen, L (Wen, Lin) [1]; Li, YD (Li, Yudong) [1]; Liu, BK (Liu, Bingkai) [1] , [2]; Fu, J (Fu, Jing) [1] , [2]; Feng, J (Feng, Jie) [1]; Cui, YH (Cui, Yihao) [1] , [2] | |
刊名 | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS |
2022 | |
卷号 | 17期号:1页码:121-127 |
关键词 | Color CMOS Image Sensor Radiation Damage Total Ionizing Dose Effects Bias Condition |
ISSN号 | 1555-130X |
DOI | 10.1166/jno.2022.3177 |
英文摘要 | The experiments of total ionizing dose radiation effects on color CMOS image sensors at different biases were presented. Two bias conditions operated during Co-60 gamma irradiation, biased and unbiased. In the data processing, the data of four channels were extracted according to the sequence of Bayer array respectively to study the difference between each channel. The full well capacity and dark signal non-uniformity versus the cumulative doses were investigated. After y-ray irradiation, the full well capacity of the samples decreased along with dark signal non-uniformity increased. Meanwhile, the descending amplitude of full well capacity was different in each channel, but the variation of dark signal non-uniformity was almost consistent. Moreover, the degradations of full well capacity and dark signal non-uniformity were more seriously under-biased. |
WOS记录号 | WOS:000800362000006 |
内容类型 | 期刊论文 |
源URL | [http://ir.xjipc.cas.cn/handle/365002/8389] |
专题 | 固体辐射物理研究室 |
通讯作者 | Wen, L (Wen, Lin) [1]; Li, YD (Li, Yudong) [1] |
作者单位 | 1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China |
推荐引用方式 GB/T 7714 | Yang, ZK ,Wen, L ,Li, YD ,et al. Total Ionizing Dose Effects of the Color Complementary Metal Oxide Semiconductor (CMOS) Image Sensor at Different Bias[J]. JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS,2022,17(1):121-127. |
APA | Yang, ZK .,Wen, L .,Li, YD .,Liu, BK .,Fu, J .,...&Cui, YH .(2022).Total Ionizing Dose Effects of the Color Complementary Metal Oxide Semiconductor (CMOS) Image Sensor at Different Bias.JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS,17(1),121-127. |
MLA | Yang, ZK ,et al."Total Ionizing Dose Effects of the Color Complementary Metal Oxide Semiconductor (CMOS) Image Sensor at Different Bias".JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS 17.1(2022):121-127. |
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