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	Smart Design of Resistive Switching Memory by an In Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire 期刊论文 ADVANCED ELECTRONIC MATERIALS, 2021, 卷号: 7, 期号: 5, 页码: - 作者: Shih, Yu-Chuan; Lee, Ling; Liang, Kai-De; Manikandan, Arumugam; Liu, Wen-Wu 收藏 \| 浏览/下载：5/0 \| 提交时间：2021/03/12 Copper Copper oxides Nanocrystalline materials Nanowires Oxide minerals RRAM Single crystals Fabrication process High current densities Random access memory Resistive switching Resistive switching memory Switching behaviors Switching mechanism Switching properties
	Thickness-dependent evolution of piezoresponses and a / c domains in [101]-oriented PbTiO3ferroelectric films 期刊论文 Journal of Applied Physics, 2020, 卷号: 128, 期号: 22 作者: Feng, Y.P.; Tang, Y.L.; Zhu, Y.L.; Zou, M.J.; Wang, Y.J. 收藏 \| 浏览/下载：4/0 \| 提交时间：2022/02/17 Domain walls Ferroelectric films Ferroelectric thin films Ferroelectricity Film thickness High resolution transmission electron microscopy Lead titanate Perovskite Piezoelectricity Scanning electron microscopy Scanning probe microscopy Tantalum compounds Domain configurations Giant permittivity Piezoelectric property Piezoelectric response Piezoresponse force microscopy Scanning transmission electron microscopy Square-root dependence Switching behaviors
	Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands 期刊论文 Acta Materialia, 2020, 卷号: 187, 页码: 12-18 作者: Han, M.J.; Tang, Y.L.; Wang, Y.J.; Zhu, Y.L.; Ma, J.Y. 收藏 \| 浏览/下载：5/0 \| 提交时间：2020/11/14 Bismuth compounds Digital storage Heterojunctions High resolution transmission electron microscopy Iron compounds Scanning probe microscopy Switching Transmission electron microscopy Tunnel junctions Charged domain wall Conductive filaments Macroscopic and microscopic Nonvolatile memory devices Piezoresponse force microscopy Resistance switching behaviors Resistive switching behaviors Technological applications
	Switching Transient Analysis for Normally-Off GaN Transistors with p-GaN Gate in a Phase-Leg Circuit 期刊论文 IEEE Transactions on Power Electronics, 2019, 卷号: 34, 页码: 3711-3728 作者: Xie, Ruiliang; Yang, Xu; Xu, Guangzhao; Wei, Jin; Wang, Yuru 收藏 \| 浏览/下载：28/0 \| 提交时间：2019/11/19 Analytical approach GaN HEMTs Junction capacitances Physical behaviors Schottky junctions Switching transient Terminal measurements Threshold-voltage instabilities
	Modulation of resistive switching in Pt/LiCoO2/SiO2/Si stacks 期刊论文 JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 卷号: 30, 页码: 4753-4759 作者: Hu, Qi; Huang, Anping; Zhang, Xinjiang; Li, Runmiao; Gao, Qin 收藏 \| 浏览/下载：5/0 \| 提交时间：2019/12/30 Cobalt compounds Platinum compounds Pulsed laser deposition Silicon compounds Switching Annealing temperatures High-resistance state Non-homogeneous Resistance state Resistive switching Resistive switching behaviors State stability Lithium compounds
	Misfit strain relaxations of (101)-oriented ferroelectric PbTiO3/(La, Sr)(Al, Ta)O3 thin film systems 期刊论文 Journal of Materials Research, 2018, 卷号: 33, 期号: 24, 页码: 4156-4164 作者: Feng, Yanpeng; Tang, Yunlong; Zhu, Yinlian; Zou, Minjie; Ma, Xiuliang 收藏 \| 浏览/下载：2/0 \| 提交时间：2020/11/14 Aluminum metallography Crystallography Ferroelectric films Ferroelectric thin films Ferroelectricity High resolution transmission electron microscopy Lead titanate Pulsed laser deposition Scanning electron microscopy Strain relaxation Tantalum metallography Titanium compounds Transmission electron microscopy Transmissions Dielectricity Gaining insights High index High quality Misfit strain relaxation Misfit strains Switching behaviors Thin film systems
	Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device 期刊论文 Journal of Alloys and Compounds, 2018, 卷号: 740, 页码: 816-822 作者: Chen, Y. R.; Li, Z. M.; Zhang, Z. W.; Hu, L. Q.; Jiang, H. 收藏 \| 浏览/下载：6/0 \| 提交时间：2019/09/17 Data storage materials Resistive switching Metal-insulator-semiconductor Annealing effect Nonvolatile memory nonvolatile memory behaviors mechanism breakdown layer power ti Chemistry Materials Science Metallurgy & Metallurgical Engineering
	Switching transient analysis for normally-Off GaN transistors with p-GaN gate in a phase-Leg circuit 会议论文作者: Xie, Ruiliang; Xu, Guangzhao; Yang, Xu; Wang, Hanxing; Tian, Mofan 收藏 \| 浏览/下载：12/0 \| 提交时间：2019/11/26 Analysis approach Dynamic behaviors Gallium Nitride (GaN) Gan transistors Intrinsic capacitance Static measurements Switching transient Threshold-voltage instabilities
	Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 722, 页码: 753-759 作者: Zhou,Guangdong; Xiao,Lihua; Zhang,Shuangju; Wu,Bo; Liu,Xiaoqin 收藏 \| 浏览/下载：21/0 \| 提交时间：2017/10/23 Electric-field Devices Bipolar Films Heterostructures Transition Behaviors Filament Matrix Cells Bilay Niox/tio2 Films Resistive Switching Memory Migration Of Oxygen Vacancy Ag Conduction Filamens
	Tunable defect engineering in TiON thin films by multi-step sputtering processes: From a Schottky diode to resistive switching memory 期刊论文 Journal of Materials Chemistry C, 2017, 卷号: 5, 期号: 25, 页码: 6319-6327 作者: Su, Teng-Yu; Huang, Chi-Hsin; Shih, Yu-Chuan; Wang, Tsang-Hsuan; Medina, Henry 收藏 \| 浏览/下载：16/0 \| 提交时间：2020/11/14 Defects Diodes Rhenium compounds RRAM Schottky barrier diodes Sputtering Switching Thin films Titanium compounds Conduction Mechanism Defect distribution Gradient distributions Rectifying characteristics Rectifying properties Resistive Random Access Memory (ReRAM) Resistive switching behaviors Resistive switching memory

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