Tunable defect engineering in TiON thin films by multi-step sputtering processes: From a Schottky diode to resistive switching memory

doi:10.1039/c7tc01130j

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	Tunable defect engineering in TiON thin films by multi-step sputtering processes: From a Schottky diode to resistive switching memory
	Su, Teng-Yu 1; Huang, Chi-Hsin 1; Shih, Yu-Chuan 1; Wang, Tsang-Hsuan 1; Medina, Henry 1; Huang, Jian-Shiou 1; Tsai, Hsu-Sheng 5; Chueh, Yu-Lun 1,2,3,4
刊名	Journal of Materials Chemistry C
	2017
卷号	5 期号:25 页码:6319-6327
关键词	Defects Diodes Rhenium compounds RRAM Schottky barrier diodes Sputtering Switching Thin films Titanium compounds Conduction Mechanism Defect distribution Gradient distributions Rectifying characteristics Rectifying properties Resistive Random Access Memory (ReRAM) Resistive switching behaviors Resistive switching memory
ISSN号	20507534
DOI	10.1039/c7tc01130j
英文摘要	The role of defect engineering is essential in resistive switching memory. In this study, multi-step sputtering processes to fabricate TiON for a resistive random access memory (ReRAM) device were demonstrated and detailed mechanisms were systematically investigated. The multi-step sputtered TiON film shows asymmetric defect distribution, exhibiting rectifying characteristics as a Schottky diode and resistive switching behavior as memory, depending on the applied bias. Rectifying properties, including a rectifying ratio of 102 at ±1.5 V, a forward current of ∼2 mA at 1.5 V, a turn-on voltage of 1.5 V and an ideality factor of 4.5, were measured. In addition, compared to a TiON ReRAM device prepared via a single-step sputtering process, TiON film with a gradient distribution of defects exhibits stable switching behavior with a better uniform SET voltage (VSET) and a coefficient of variation (σ/μ) which improves from 0.49 to 0.17. The conduction mechanisms of two kinds of device were investigated via a trap-controlled space charge limit conduction (SCLC) process. The mechanisms of how the distribution of asymmetric defects affects the resistive switching behavior were discussed in detail. The results disclose the possibility of the modulation of defect engineering toward Schottky diode applications, leading to the improvement of ReRAM performance for one-diode one-resistor (1D1R) applications in the future. © 2017 The Royal Society of Chemistry.
WOS研究方向	Materials Science ; Physics
语种	英语
出版者	Royal Society of Chemistry
WOS记录号	WOS:000404722500025
内容类型	期刊论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/114888]
专题	兰州理工大学
作者单位	1.Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu; 30013, Taiwan; 2.School of Material Science and Engineering, State Key Laboratory of Advanced Processing and Recycling of Non-ferrous Metals, Lanzhou University of Technology, Lanzhou City, Gansu; 730050, China; 3.Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu; 611731, China; 4.Department of Physics, National Sun Yat-Sen University, Kaohsiung; 80424, Taiwan; 5.Institute of Nuclear Engineering and Science, National Tsing Hua University, Hsinchu; 30013, Taiwan
推荐引用方式 GB/T 7714	Su, Teng-Yu,Huang, Chi-Hsin,Shih, Yu-Chuan,et al. Tunable defect engineering in TiON thin films by multi-step sputtering processes: From a Schottky diode to resistive switching memory[J]. Journal of Materials Chemistry C,2017,5(25):6319-6327.
APA	Su, Teng-Yu.,Huang, Chi-Hsin.,Shih, Yu-Chuan.,Wang, Tsang-Hsuan.,Medina, Henry.,...&Chueh, Yu-Lun.(2017).Tunable defect engineering in TiON thin films by multi-step sputtering processes: From a Schottky diode to resistive switching memory.Journal of Materials Chemistry C,5(25),6319-6327.
MLA	Su, Teng-Yu,et al."Tunable defect engineering in TiON thin films by multi-step sputtering processes: From a Schottky diode to resistive switching memory".Journal of Materials Chemistry C 5.25(2017):6319-6327.