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CORC

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The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain 期刊论文
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2022, 卷号: 284
作者:  Lu, Xuefeng;  Li, Lingxia;  Guo, Xin;  Ren, Junqiang;  Xue, Hongtao
收藏  |  浏览/下载：18/0  |  提交时间：2022/08/09
Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field 期刊论文
Vacuum, 2021, 卷号: 188
作者:  Lu, Xuefeng;  Li, Lingxia;  Luo, Jianhua;  Guo, Xin;  Ren, Junqiang
收藏  |  浏览/下载：8/0  |  提交时间：2021/06/03
Improved photocatalytic degradation and reduction performance of Bi2O3 by the decoration of AuPt alloy nanoparticles 期刊论文
Optical Materials, 2021, 卷号: 111
作者:  Xian, Tao;  Sun, Xiaofeng;  Di, Lijing;  Li, Hongqin;  Yang, Hua
收藏  |  浏览/下载：10/0  |  提交时间：2021/03/02
Recrystallization effects in GeV Bi ion implanted 4H-SiC Schottky barrier diode investigated by cross-sectional Micro-Raman spectroscopy 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2020, 卷号: 478, 页码: 5-10
作者:  Huang, Mingmin;  Yang, Zhimei;  Wang, Shaomin;  Liu, Jiyuan;  Gong, Min
收藏  |  浏览/下载：26/0  |  提交时间：2021/12/15
Diamond Schottky barrier diodes with floating metal rings for high breakdown voltage 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 卷号: 97, 页码: 101-105
作者:  Wang, Juan;  Zhao, Dan;  Wang, Wei;  Zhang, Xiaofan;  Wang, Yanfeng
收藏  |  浏览/下载：53/0  |  提交时间：2019/11/19
Achieving high performance Ga2O3 diodes by adjusting chemical composition of tin oxide Schottky electrode 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 卷号: 34, 期号: 7
作者:  Du, Lulu;  Xin, Qian;  Xu, Mingsheng;  Liu, Yaxuan;  Liang, Guangda
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/11
High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 3, 页码: 451-454
作者:  Du, Lulu;  Xin, Qian;  Xu, Mingsheng;  Liu, Yaxuan;  Mu, Wenxiang
收藏  |  浏览/下载：15/0  |  提交时间：2019/12/11
High-performance quasi-vertical GaN Schottky diode with low turn-on voltage. 期刊论文
Superlattices & Microstructures, 2019, 卷号: Vol.125, 页码: 295-301
作者:  Bian, Zhao-Ke;  Zhou, Hong;  Xu, Sheng-Rui;  Zhang, Tao;  Dang, Kui
收藏  |  浏览/下载：25/0  |  提交时间：2019/12/17
Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications 期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1236-1242
作者:  Hongliang Zhao;  Lin-An Yang;  Hao Zou;  Xiao-hua Ma;  Yue Hao
收藏  |  浏览/下载：35/0  |  提交时间：2019/12/17
Contacting MoS2 to MXene: Vanishing p-Type Schottky Barrier and Enhanced Hydrogen Evolution Catalysis 期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2019, 卷号: 123, 页码: 3719-3726
作者:  You, Jinxuan;  Si, Chen;  Zhou, Jian;  Sun, Zhimei
收藏  |  浏览/下载：66/0  |  提交时间：2019/12/30

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