Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field

doi:10.1016/j.vacuum.2021.110208

	Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field
	Lu, Xuefeng; Li, Lingxia; Luo, Jianhua; Guo, Xin; Ren, Junqiang; Xue, Hongtao; Li, Hui
刊名	Vacuum
	2021-06-01
卷号	188
关键词	Optoelectronic devices Schottky barrier diodes Van der Waals forces Electronic performance Electronics devices External strains First principle calculations Optoelectronics devices P-type Schottky barriers Schottky contacts Si$-3$/N$-4$ Van der Waal
ISSN号	0042-207X
DOI	10.1016/j.vacuum.2021.110208
英文摘要	Graphene-based van der Waals (vdW) heterostructures have currently emerged as a promising application in the construction of next-generation electronic and optoelectronic devices. In this present contribution, through the comprehensive first-principle calculations, the electronic characteristics along with the Schottky barrier of graphene/β-silicon nitride(0001) heterostructure are theoretically investigated, considering external strain and electric fields effects. The results concluded that the electronic performance of both the graphene monolayer and β-Si3N4(0001) surface are perfectly maintained in the heterostructure on account of a weak interlayer vdW force between them. Furthermore, the graphene/β-Si3N4 (0001) heterostructure forms a p-type Schottky contact with the SBH of 0.72 eV, which can be modified by using normal strain or perpendicular electric field. It is found that the heterostructure still maintains a p-type Schottky contact when the interlayer spacing from 2.2 Å to 4.4 Å or when the applied positive electric field is smaller than 0.2 V/Å. Most importantly, a transformation from the p-type Schottky contact to Ohmic one is observed in the heterostructure at an electric field of +0.2 V/Å. The above results are expected to provide a practical guidance for designing and fabrication of the novel nanoelectronic devices based on graphene/β-Si3N4 vdW heterostructure. © 2021
WOS研究方向	Materials Science ; Physics
语种	英语
出版者	Elsevier Ltd
WOS记录号	WOS:000649683500003
内容类型	期刊论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/148453]
专题	材料科学与工程学院省部共建有色金属先进加工与再利用国家重点实验室
作者单位	State Key Laboratory of Advanced Processing and Recycling of Non-ferrous Metal, Department of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou; 730050, China
推荐引用方式 GB/T 7714	Lu, Xuefeng,Li, Lingxia,Luo, Jianhua,et al. Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field[J]. Vacuum,2021,188.
APA	Lu, Xuefeng.,Li, Lingxia.,Luo, Jianhua.,Guo, Xin.,Ren, Junqiang.,...&Li, Hui.(2021).Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field.Vacuum,188.
MLA	Lu, Xuefeng,et al."Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field".Vacuum 188(2021).