The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain

doi:10.1016/j.mseb.2022.115882

	The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain
	Lu, Xuefeng; Li, Lingxia; Guo, Xin; Ren, Junqiang; Xue, Hongtao; Tang, Fuling
刊名	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
	2022-10-01
卷号	284
关键词	Binding energy Calculations Gallium compounds Graphene Ground state Heterojunctions III-V semiconductors Ohmic contacts Schottky barrier diodes Strain Thermoelectric equipment Van der Waals forces Electronic characteristics Graphene/GaP In-plane strains Interlayer coupling Layer-spacing Micro/nano Nanoelectronic devices P-type Schottky barriers Schottky contacts
ISSN号	0921-5107
DOI	10.1016/j.mseb.2022.115882
英文摘要	Establishing the desired heterostructures by assembling suitable semiconductor materials has shown significant potential for applications in next-generation micro-nano electronic devices. In this present contribution, we demonstrate the geometric structure and electronic properties of graphene/GaP heterostructure by first-principles calculations. It is found that the heterostructure is characterized by weak interlayer coupling accompanying the stable layer spacing of 3.40 Å and binding energy of −39.35 meV, meaning that the interlayer is dominated by van der Waals (vdW) force. The electronic band structure of free-standing graphene and GaP monolayers are preserved well. Meanwhile, a tiny bandgap of approximatively 20 meV at the Dirac point of graphene is opened, which is attributed to the breakdown of sublattice symmetry. In the ground state, the Schottky contact of p-type is present with the n-type and p-type SBH of 1.71 eV and 0.10 eV, respectively, which can be effectively induced by imposing interlayer coupling as well as in-plane strains. Especially, the transition of p-Schottky contact to p-Ohmic contact occurs when the layer spacing decreases to 3.20 Å or the strain increases to +2 %. These theoretical results may offer potential guiding principle in future electronic devices. © 2022 Elsevier B.V.
语种	英语
出版者	Elsevier Ltd
内容类型	期刊论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/159359]
专题	材料科学与工程学院省部共建有色金属先进加工与再利用国家重点实验室
作者单位	State Key Laboratory of Advanced Processing and Recycling of Non-ferrous Metal, Department of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou; 730050, China
推荐引用方式 GB/T 7714	Lu, Xuefeng,Li, Lingxia,Guo, Xin,et al. The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain[J]. Materials Science and Engineering B: Solid-State Materials for Advanced Technology,2022,284.
APA	Lu, Xuefeng,Li, Lingxia,Guo, Xin,Ren, Junqiang,Xue, Hongtao,&Tang, Fuling.(2022).The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain.Materials Science and Engineering B: Solid-State Materials for Advanced Technology,284.
MLA	Lu, Xuefeng,et al."The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain".Materials Science and Engineering B: Solid-State Materials for Advanced Technology 284(2022).