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High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes 期刊论文
chinese physics letters, 2014, 卷号: 31, 期号: 6, 页码: 068502
Kang, H; Wang, Q; Xiao, HL; Wang, CM; Jiang, LJ; Feng, C; Chen, H; Yin, HB; Wang, XL; Wang, ZG; Hou, X
收藏  |  浏览/下载:15/0  |  提交时间:2015/03/25
Competitive growth mechanisms of AlN on Si (111) by MOVPE 期刊论文
scientific reports, 2014, 卷号: 4, 页码: 6416
Feng, YX; Wei, HY; Yang, SY; Chen, Z; Wang, LS; Kong, SS; Zhao, GJ; Liu, XL
收藏  |  浏览/下载:22/0  |  提交时间:2015/03/25
Morphology and structure controlled growth of one-dimensional AlN nanorod arrays by hydride vapor phase epitaxy 期刊论文
rsc advances, 2014, 卷号: 4, 期号: 97, 页码: 54902-54906
Kong, SS; Wei, HY; Yang, SY; Li, HJ; Feng, YX; Chen, Z; Liu, XL; Wang, LS; Wang, ZG
收藏  |  浏览/下载:21/0  |  提交时间:2015/03/20
Significant quality improvement of GaN on Si upon formation of an AlN defective layer 期刊论文
crystengcomm, 2014, 卷号: 16, 期号: 32, 页码: 7525-7528
Feng, YX; Wei, HY; Yang, SY; Zhang, H; Kong, SS; Zhao, GJ; Liu, XL
收藏  |  浏览/下载:15/0  |  提交时间:2015/03/25
Interface roughness scattering considering the electrical field fluctuation in undoped AlxGa1-xN/GaN heterostructures 期刊论文
semiconductor science and technology, 2014, 卷号: 29, 期号: 4, 页码: 045015
Feng, YX; Liu, GP; Yang, SY; Wei, HY; Liu, XL; Zhu, QS; Wang, ZG
收藏  |  浏览/下载:12/0  |  提交时间:2015/04/02
Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation 期刊论文
journal of applied physics, 2014, 卷号: 116, 期号: 5, 页码: 054502
Yan, JD; Wang, XL; Wang, Q; Qu, SQ; Xiao, HL; Peng, EC; Kang, H; Wang, CM; Feng, C; Yin, HB; Jiang, LJ; Li, BQ; Wang, ZG; Hou, X
收藏  |  浏览/下载:22/0  |  提交时间:2015/03/25
Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer 期刊论文
european physical journal-applied physics, 2014, 卷号: 66, 期号: 2, 页码: 20101
Qu, SQ; Wang, XL; Xiao, HL; Hou, X; Wang, CM; Jiang, LJ; Feng, C; Chen, H; Yin, HB; Peng, EC; Kang, H; Wang, ZG
收藏  |  浏览/下载:17/0  |  提交时间:2015/04/02
Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT 期刊论文
european physical journal-applied physics, 2014, 卷号: 68, 期号: 1, 页码: 10105
Qu, SQ; Wang, XL; Xiao, HL; Wang, CM; Jiang, LJ; Feng, C; Chen, H; Yin, HB; Yan, JD; Peng, EC; Kang, H; Wang, ZG; Hou, X
收藏  |  浏览/下载:19/0  |  提交时间:2015/03/20
Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2012, 卷号: 359, 页码: 55-59
Li LG (Li, Li-Gong); Liu SM (Liu, Shu-Man); Luo S (Luo, Shuai); Yang T (Yang, Tao); Wang LJ (Wang, Li-Jun); Liu JQ (Liu, Jun-Qi); Liu FQ (Liu, Feng-Qi); Ye XL (Ye, Xiao-Ling); Xu B (Xu, Bo); Wang ZG (Wang, Zhan-Guo)
收藏  |  浏览/下载:18/0  |  提交时间:2013/03/26
Numerical optimization of carrier confinement characteristics in (AlxGa1-xN/AlN)SLs/GaN heterostructures 期刊论文
physica b-condensed matter, 2012, 卷号: 407, 期号: 18, 页码: 3920-3924
Ding JQ (Ding, Jieqin); Wang XL (Wang, Xiaoliang); Xiao HL (Xiao, Hongling); Wang CM (Wang, Cuimei); Yin HB (Yin, Haibo); Chen H (Chen, Hong); Feng C (Feng, Chun); Jiang LJ (Jiang, Lijuan)
收藏  |  浏览/下载:11/0  |  提交时间:2013/03/27


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