Interface roughness scattering considering the electrical field fluctuation in undoped AlxGa1-xN/GaN heterostructures

	Interface roughness scattering considering the electrical field fluctuation in undoped AlxGa1-xN/GaN heterostructures
	Feng, YX ; Liu, GP ; Yang, SY ; Wei, HY ; Liu, XL ; Zhu, QS ; Wang, ZG
刊名	semiconductor science and technology
	2014
卷号	29 期号:4 页码:045015
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2015-04-02
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26376]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Feng, YX,Liu, GP,Yang, SY,et al. Interface roughness scattering considering the electrical field fluctuation in undoped AlxGa1-xN/GaN heterostructures[J]. semiconductor science and technology,2014,29(4):045015.
APA	Feng, YX.,Liu, GP.,Yang, SY.,Wei, HY.,Liu, XL.,...&Wang, ZG.(2014).Interface roughness scattering considering the electrical field fluctuation in undoped AlxGa1-xN/GaN heterostructures.semiconductor science and technology,29(4),045015.
MLA	Feng, YX,et al."Interface roughness scattering considering the electrical field fluctuation in undoped AlxGa1-xN/GaN heterostructures".semiconductor science and technology 29.4(2014):045015.