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CORC

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Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes 期刊论文
optics letters, 2014, 卷号: 39, 期号: 2, 页码: 379-382
Wei, TB; Ji, XL; Wu, K; Zheng, HY; Du, CX; Chen, Y; Yan, QF; Zhao, LX; Zhou, Z; Wang, JX; Li, JM
收藏  |  浏览/下载：20/0  |  提交时间：2015/03/25
Efficiency improvement by polarization-reversed electron blocking structure in GaN-based light-emitting diodes 期刊论文
optics express, 2014, 卷号: 22, 期号: 9, 页码: a1001-a1008
Ji, XL; Wei, TB; Yang, FH; Lu, HX; Wei, XC; Ma, P; Yi, XY; Wang, JX; Zeng, YP; Wang, GH; Li, JM
收藏  |  浏览/下载：15/0  |  提交时间：2015/04/02
Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots 期刊论文
applied physics letters, 2012, 卷号: 101, 期号: 13, 页码: 131101
Ma J (Ma, Jun); Ji XL (Ji, Xiaoli); Wang GH (Wang, Guohong); Wei XC (Wei, Xuecheng); Lu HX (Lu, Hongxi); Yi XY (Yi, Xiaoyan); Duan RF (Duan, Ruifei); Wang JX (Wang, Junxi); Zeng YP (Zeng, Yiping); Li JM (Li, Jinmin); Yang FH (Yang, Fuhua); Wang C (Wang, Chao); Zou G (Zou, Gang)
收藏  |  浏览/下载：22/0  |  提交时间：2013/03/27
A Photovoltaic InAs Quantum-Dot Infrared Photodetector 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 4, 页码: art. no. 047801
Tang GH (Tang Guang-Hua); Xu B (Xu Bo); Jiang; LW (Jiang Li-Wen); Kong JX (Kong Jin-Xia); Kong; N (Kong Ning); Liang DC (Liang De-Chun); Liang P (Liang Ping); Ye XL (Ye Xiao-Ling); Jin P (Jin Peng); Liu FQ (Liu Feng-Qi); Chen YH (Chen Yong-Hai); Wang ZG (Wang Zhan-Guo)
收藏  |  浏览/下载：270/36  |  提交时间：2010/04/28
Hydrogen sensors based on AlGaN/AIN/GaN HEMT 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 1, 页码: 20-23
Wang, XH; Wang, XL; Feng, C; Yang, CB; Wang, BZ; Ran, JX; Xiao, HL; Wang, CM; Wang, JX
收藏  |  浏览/下载：51/6  |  提交时间：2010/03/08
Hydrogen sensors based on AlGaN/AIN/GaN Schottky diodes 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 1, 页码: 266-269
Wang, XH; Wang, XL; Feng, C; Xiao, HL; Yang, CB; Wang, JX; Wang, BZ; Ran, JX; Wang, CM
收藏  |  浏览/下载：74/8  |  提交时间：2010/03/08
Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes 会议论文
symposium on quantum confined semiconductor nanostructures held at the 2002 mrs fall meeting, boston, ma, dec 02, 2001-dec 05, 2002
作者:  Jin P;  Li CM;  Xu B;  Ye XL
收藏  |  浏览/下载：14/2  |  提交时间：2010/10/29
35-PERCENT EFFICIENT NONCONCENTRATING NOVEL SILICON SOLAR-CELL - RESPONSE 期刊论文
applied physics letters, 1993, 卷号: 63, 期号: 6, 页码: 851-852
LI JM; CHONG M; ZHU JC; LI YJ; XU JD; WANG PD; SHANG ZQ; YANG ZK; ZHU RH; CAO XL
收藏  |  浏览/下载：16/0  |  提交时间：2010/11/15

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