Hydrogen sensors based on AlGaN/AIN/GaN Schottky diodes

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	Hydrogen sensors based on AlGaN/AIN/GaN Schottky diodes
	Wang, XH ; Wang, XL ; Feng, C ; Xiao, HL ; Yang, CB ; Wang, JX ; Wang, BZ ; Ran, JX ; Wang, CM
刊名	chinese physics letters
	2008
卷号	25 期号:1 页码:266-269
关键词	GAS SENSORS HEMT STRUCTURES MOBILITY TRANSISTORS TEMPERATURE SURFACES PT/GAN GROWTH PD/GAN MOCVD
ISSN号	0256-307x
通讯作者	wang, xh, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: wxh@mail.semi.ac.cn
中文摘要	pt/algan/ain/gan schottky diodes are fabricated and characterized for hydrogen sensing. the pt schottky contact and the ti/al/ni/au ohmic contact are formed by evaporation. both the forward and reverse currents of the device increase greatly when exposed to hydrogen gas. a shift of 0.3 v at 300k is obtained at a fixed forward current after switching from n-2 to 10%h-2+n-2. the sensor responses under different concentrations from 50ppm h-2 to 10%h-2+n-2 at 373k are investigated. time dependences of the device forward current at 0.5 v forward bias in n-2 and air atmosphere at 300 and 373k are compared. oxygen in air accelerates the desorption of the hydrogen and the recovery of the sensor. finally, the decrease of the schottky barrier height and sensitivity of the sensor are calculated.
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6898]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang, XH,Wang, XL,Feng, C,et al. Hydrogen sensors based on AlGaN/AIN/GaN Schottky diodes[J]. chinese physics letters,2008,25(1):266-269.
APA	Wang, XH.,Wang, XL.,Feng, C.,Xiao, HL.,Yang, CB.,...&Wang, CM.(2008).Hydrogen sensors based on AlGaN/AIN/GaN Schottky diodes.chinese physics letters,25(1),266-269.
MLA	Wang, XH,et al."Hydrogen sensors based on AlGaN/AIN/GaN Schottky diodes".chinese physics letters 25.1(2008):266-269.