Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes

	Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes
	Wei, TB ; Ji, XL ; Wu, K ; Zheng, HY ; Du, CX ; Chen, Y ; Yan, QF ; Zhao, LX ; Zhou, Z ; Wang, JX ; Li, JM
刊名	optics letters
	2014
卷号	39 期号:2 页码:379-382
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2015-03-25
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26161]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Wei, TB,Ji, XL,Wu, K,et al. Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes[J]. optics letters,2014,39(2):379-382.
APA	Wei, TB.,Ji, XL.,Wu, K.,Zheng, HY.,Du, CX.,...&Li, JM.(2014).Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes.optics letters,39(2),379-382.
MLA	Wei, TB,et al."Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes".optics letters 39.2(2014):379-382.