Hydrogen sensors based on AlGaN/AIN/GaN HEMT

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	Hydrogen sensors based on AlGaN/AIN/GaN HEMT
	Wang, XH ; Wang, XL ; Feng, C ; Yang, CB ; Wang, BZ ; Ran, JX ; Xiao, HL ; Wang, CM ; Wang, JX
刊名	microelectronics journal
	2008
卷号	39 期号:1 页码:20-23
关键词	AlGaN/AIN/GaN HEMT hydrogen sensor
ISSN号	0026-2692
通讯作者	wang, xh, chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china. 电子邮箱地址: wxh@mail.semi.ac.cn
中文摘要	pt/algan/ain/gan high electron mobility transistors (hemt) were fabricated and characterized for hydrogen sensing. pt and ti/al/ni/au metals were evaporated to form the schottky contact and the ohmic contact, respectively. the sensors can be operated in either the field effect transistor (fet) mode or the schottky diode mode. current changes and time dependence of the sensors under the fet and diode modes were compared. when the sensor was operated in the fet mode, the sensor can have larger current change of 8 ma, but its sensitivity is only about 0.2. in the diode mode, the current change was very small under the reverse bias but it increased greatly and gradually saturated at 0.8 ma under the forward bias. the sensor had much higher sensitivity when operated in the diode mode than in the fet mode. the oxygen in the air could accelerate the desorption of the hydrogen and the recovery of the sensor. (c) 2007 elsevier ltd. all rights reserved.
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6850]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang, XH,Wang, XL,Feng, C,et al. Hydrogen sensors based on AlGaN/AIN/GaN HEMT[J]. microelectronics journal,2008,39(1):20-23.
APA	Wang, XH.,Wang, XL.,Feng, C.,Yang, CB.,Wang, BZ.,...&Wang, JX.(2008).Hydrogen sensors based on AlGaN/AIN/GaN HEMT.microelectronics journal,39(1),20-23.
MLA	Wang, XH,et al."Hydrogen sensors based on AlGaN/AIN/GaN HEMT".microelectronics journal 39.1(2008):20-23.