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CORC

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Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs 期刊论文
physical review b, 2010, 卷号: 82, 期号: 19, 页码: art. no. 193204
Deng HX (Deng Hui-Xiong); Li JB (Li Jingbo); Li SS (Li Shu-Shen); Peng HW (Peng Haowei); Xia JB (Xia Jian-Bai); Wang LW (Wang Lin-Wang); Wei SH (Wei Su-Huai)
收藏  |  浏览/下载：47/0  |  提交时间：2010/12/27
Optical study of lateral carrier transfer in (In,Ga)As/GaAs quantum-dot chains 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 1, 页码: art. no. 011107
Wang, BR; Sun, BQ; Ji, Y; Dou, XM; Xu, ZY; Wang, ZM; Salamo, GJ
收藏  |  浏览/下载：104/2  |  提交时间：2010/03/08
Deep level transient spectroscopy studies of Er and Pr implanted GaN films 期刊论文
acta physica sinica, 2006, 卷号: 55, 期号: 3, 页码: 1407-1412
Song SF; Chen WD; Xu ZJ; Xu XR
收藏  |  浏览/下载：45/0  |  提交时间：2010/04/11
Interdot interaction induced zero-bias maximum of the differential conductance in parallel double quantum dots 期刊论文
journal of applied physics, 2006, 卷号: 99, 期号: 4, 页码: art.no.043705
Chi F; Li SS
收藏  |  浏览/下载：93/0  |  提交时间：2010/04/11
Magnetic properties and rectifying behaviour of silicon doped with gadolinium 期刊论文
acta physica sinica, 2003, 卷号: 52, 期号: 6, 页码: 1469-1473
Zhou JP; Chen NF; Song SL; Chai CL; Yang SY; Liu ZK; Lin LY
收藏  |  浏览/下载：34/0  |  提交时间：2010/08/12
Dose rate dependence of electrical characteristics of lead zirconate titanate capacitors 期刊论文
japanese journal of applied physics part 1-regular papers short notes & review papers, 2003, 卷号: 42, 期号: 10, 页码: 6491-6495
Zhang GQ; Sun P; Zou Q; Mei X; Ruda HE; Gu Q; Yu XF; Ren DY; Yan RL
收藏  |  浏览/下载：1271/12  |  提交时间：2010/08/12
Transient photoconductivity and its light-induced change of lightly boron-doped a-Si : H films 期刊论文
acta physica sinica, 2002, 卷号: 51, 期号: 1, 页码: 111-114
Zhang SB; Kong GL; Xu YY; Wang YQ; Diao HW; Liao XB
收藏  |  浏览/下载：93/12  |  提交时间：2010/08/12
Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance 期刊论文
journal of applied physics, 2002, 卷号: 92, 期号: 4, 页码: 1968-1970
Dong HW; Zhao YW; Zhang YH; Jiao JH; Zhao JQ; Lin LY
收藏  |  浏览/下载：63/15  |  提交时间：2010/08/12
Hydrostatic pressure effect on photoluminescence from a GaN0.015As0.985/GaAs quantum well 期刊论文
applied physics letters, 2001, 卷号: 78, 期号: 23, 页码: 3595-3597
Tsang MS; Wang JN; Ge WK; Li GH; Fang ZL; Chen Y; Han HX; Li LH; Pan Z
收藏  |  浏览/下载：98/11  |  提交时间：2010/08/12
Studies of high DC current induced degradation in III-V nitride based heterojunctions 期刊论文
ieee transactions on electron devices, 2000, 卷号: 47, 期号: 7, 页码: 1421-1425
Ho WY; Surya C; Tong KY; Lu LW; Ge WK
收藏  |  浏览/下载：38/0  |  提交时间：2010/08/12

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