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	Deep level transient spectroscopy studies of Er and Pr implanted GaN films
	Song SF ; Chen WD ; Xu ZJ ; Xu XR
刊名	acta physica sinica
	2006
卷号	55期号:3页码:1407-1412
关键词	GaN Er Pr-implautation deep level transient spectroscopy N-TYPE GAN DEFECTS EPITAXY TRAPS
ISSN号	1000-3290
通讯作者	song, sf, beijing jiaotong univ, inst optoelect technol, beijing 100044, peoples r china. e-mail: sfsong@center.njtu.edu.cn
中文摘要	deep level transient spectroscopy measurements were used to characterize the electrical properties of metal organic chemical vapor deposition grown undoped, er-implanted and pr-implanted gan films. only one deep level located at 0.270 ev below the conduction band was found in the as-grown gan films. but four defect levels located at 0.300 ev, 0.188 ev, 0.600 ev and 0.410 ev below the conduction band were found in the er-implanted gan films after annealing at 900 degrees c for 30 min, and four defect levels located at 0.280 ev, 0.190 ev, 0.610 ev and 0.390 ev below the conduction band were found in the pr-implanted gan films after annealing at 1050 degrees c for 30min. the origins of the deep defect levels are discussed. after annealing at 900 degrees c for 30min in a nitrogen flow, er-related 1538nm luminescence peaks could be observed for the er-implanted gan sample. the energy-transfer and luminescence mechanism of the er-implanted gan film are described.
学科主题	半导体物理
收录类别	SCI
语种	中文
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10804]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Song SF,Chen WD,Xu ZJ,et al. Deep level transient spectroscopy studies of Er and Pr implanted GaN films[J]. acta physica sinica,2006,55(3):1407-1412.
APA	Song SF,Chen WD,Xu ZJ,&Xu XR.(2006).Deep level transient spectroscopy studies of Er and Pr implanted GaN films.acta physica sinica,55(3),1407-1412.
MLA	Song SF,et al."Deep level transient spectroscopy studies of Er and Pr implanted GaN films".acta physica sinica 55.3(2006):1407-1412.

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