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科研机构
半导体研究所 [28]
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期刊论文 [22]
会议论文 [6]
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2011 [1]
2009 [2]
2008 [2]
2007 [1]
2006 [5]
2004 [2]
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半导体材料 [28]
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Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN
期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.102104
作者:
Deng QW
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浏览/下载:47/5
  |  
提交时间:2011/07/05
QUANTUM-WELL-STRUCTURE
ALGAN/GAN HETEROSTRUCTURE
YELLOW LUMINESCENCE
DEEP LEVELS
TRAP
PERFORMANCE
FREQUENCY
EPILAYERS
ORIGIN
DIODES
Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy (vol 94, 052101, 2009)
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 12, 页码: art. no. 129901
作者:
Wei HY
;
Song HP
;
Jiao CM
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  |  
浏览/下载:379/108
  |  
提交时间:2010/03/08
aluminium compounds
core levels
III-V semiconductors
magnesium compounds
semiconductor heterojunctions
semiconductor-insulator boundaries
X-ray photoelectron spectra
Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301
作者:
Jin P
;
Wei HY
;
Song HP
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  |  
浏览/下载:310/47
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
II-VI semiconductors
indium compounds
interface states
polarisation
semiconductor heterojunctions
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
zinc compounds
Influence of electron irradiation on hydrothermally grown zinc oxide single crystals
期刊论文
semiconductor science and technology, 2008, 卷号: 23, 期号: 9, 页码: art. no. 095028
Lu LW
;
So CK
;
Zhu CY
;
Gu QL
;
Li CJ
;
Fung S
;
Brauer G
;
Anwand W
;
Skorupa W
;
Ling CC
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  |  
浏览/下载:110/1
  |  
提交时间:2010/03/08
SCHOTTKY CONTACTS
Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 24, 页码: art. no. 242107
Zhang BL
;
Sun GS
;
Guo Y
;
Zhang PF
;
Zhang RQ
;
Fan HB
;
Liu XL
;
Yang SY
;
Zhu QS
;
Wang ZG
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  |  
浏览/下载:231/42
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
indium compounds
interface states
semiconductor heterojunctions
silicon compounds
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
Anomalous photoluminescence of InAs quantum dots implanted by Mn ions
期刊论文
physica e-low-dimensional systems & nanostructures, 2007, 卷号: 36, 期号: 2, 页码: 221-225
作者:
Ye XL
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  |  
浏览/下载:55/0
  |  
提交时间:2010/03/29
photoluminescence
Growth and characterization of semi-insulating GaN films grown by MOCVD
期刊论文
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 14-18
Fang CB
;
Wang XL
;
Hu GX
;
Wang JX
;
Wang CM
;
Li JM
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  |  
浏览/下载:49/0
  |  
提交时间:2010/04/11
MOCVD
GaN
resistivity
TSC
N-TYPE GAN
DOPED GAN
SPECTROSCOPY
CARBON
FE
Deep levels in high resistivity GaN epilayers grown by MOCVD
会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Fang, CB
;
Wang, XL
;
Wang, JX
;
Liu, C
;
Wang, CM
;
Hu, GX
;
Li, JP
;
Li, CJ
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  |  
浏览/下载:114/18
  |  
提交时间:2010/03/29
THERMALLY STIMULATED CURRENT
GALLIUM NITRIDE
DEFECTS
Growth and characterization of semi-insulating GaN films grown by MOCVD
会议论文
3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005
Fang, CB
;
Wang, XL
;
Hu, GX
;
Wang, JX
;
Wang, CM
;
Li, JM
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  |  
浏览/下载:202/36
  |  
提交时间:2010/03/29
MOCVD
Recent research results on deep level defects in semi-insulating InP - Application to improve material quality
会议论文
12th international conference on indium phosphide and related materials, princeton, nj, may 07-11, 2006
Zhao, YW (Zhao, Youwen)
;
Dong, ZY (Dong, Zhiyuan)
;
Dong, HW (Dong, Hongwei)
;
Sun, NF (Sun, Niefeng)
;
Sun, TN (Sun, Tongnian)
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  |  
浏览/下载:61/12
  |  
提交时间:2010/03/29
STIMULATED CURRENT SPECTROSCOPY
CURRENT TRANSIENT SPECTROSCOPY
FE-DOPED INP
POINT-DEFECTS
COMPENSATION
TEMPERATURE
DONORS
TRAPS
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