Recent research results on deep level defects in semi-insulating InP - Application to improve material quality
Zhao, YW (Zhao, Youwen) ; Dong, ZY (Dong, Zhiyuan) ; Dong, HW (Dong, Hongwei) ; Sun, NF (Sun, Niefeng) ; Sun, TN (Sun, Tongnian)
2006
会议名称12th international conference on indium phosphide and related materials
会议日期may 07-11, 2006
会议地点princeton, nj
关键词STIMULATED CURRENT SPECTROSCOPY CURRENT TRANSIENT SPECTROSCOPY FE-DOPED INP POINT-DEFECTS COMPENSATION TEMPERATURE DONORS TRAPS
页码139-143
通讯作者zhao, yw, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china.
中文摘要an apparent defect suppression effect has been observed in inp through an investigation of deep level defects in different semi-insulating (si) inp materials. quality improvement of si-inp based on the defect suppression mechanism is presented.
英文摘要an apparent defect suppression effect has been observed in inp through an investigation of deep level defects in different semi-insulating (si) inp materials. quality improvement of si-inp based on the defect suppression mechanism is presented.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:06z (gmt). no. of bitstreams: 1 2243.pdf: 385067 bytes, checksum: df5639e83adc82b318366c846ace1ce3 (md5) previous issue date: 2006; ieee. princeton univ; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别CPCI-S
会议主办者ieee. princeton univ
会议录2006 international conference on indium phosphide and related materials conference proceedings
会议录出版者ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地345 e 47th st, new york, ny 10017 usa
学科主题半导体材料
语种英语
ISBN号978-0-7803-9557-2
内容类型会议论文
源URL[http://ir.semi.ac.cn/handle/172111/9784]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Zhao, YW ,Dong, ZY ,Dong, HW ,et al. Recent research results on deep level defects in semi-insulating InP - Application to improve material quality[C]. 见:12th international conference on indium phosphide and related materials. princeton, nj. may 07-11, 2006.
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