Recent research results on deep level defects in semi-insulating InP - Application to improve material quality | |
Zhao, YW (Zhao, Youwen) ; Dong, ZY (Dong, Zhiyuan) ; Dong, HW (Dong, Hongwei) ; Sun, NF (Sun, Niefeng) ; Sun, TN (Sun, Tongnian) | |
2006 | |
会议名称 | 12th international conference on indium phosphide and related materials |
会议日期 | may 07-11, 2006 |
会议地点 | princeton, nj |
关键词 | STIMULATED CURRENT SPECTROSCOPY CURRENT TRANSIENT SPECTROSCOPY FE-DOPED INP POINT-DEFECTS COMPENSATION TEMPERATURE DONORS TRAPS |
页码 | 139-143 |
通讯作者 | zhao, yw, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. |
中文摘要 | an apparent defect suppression effect has been observed in inp through an investigation of deep level defects in different semi-insulating (si) inp materials. quality improvement of si-inp based on the defect suppression mechanism is presented. |
英文摘要 | an apparent defect suppression effect has been observed in inp through an investigation of deep level defects in different semi-insulating (si) inp materials. quality improvement of si-inp based on the defect suppression mechanism is presented.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:06z (gmt). no. of bitstreams: 1 2243.pdf: 385067 bytes, checksum: df5639e83adc82b318366c846ace1ce3 (md5) previous issue date: 2006; ieee. princeton univ; chinese acad sci, inst semicond, beijing 100083, peoples r china |
收录类别 | CPCI-S |
会议主办者 | ieee. princeton univ |
会议录 | 2006 international conference on indium phosphide and related materials conference proceedings |
会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
学科主题 | 半导体材料 |
语种 | 英语 |
ISBN号 | 978-0-7803-9557-2 |
内容类型 | 会议论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/9784] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Zhao, YW ,Dong, ZY ,Dong, HW ,et al. Recent research results on deep level defects in semi-insulating InP - Application to improve material quality[C]. 见:12th international conference on indium phosphide and related materials. princeton, nj. may 07-11, 2006. |
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