Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

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	Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy
	Zhang BL ; Sun GS ; Guo Y ; Zhang PF ; Zhang RQ ; Fan HB ; Liu XL ; Yang SY ; Zhu QS ; Wang ZG
刊名	applied physics letters
	2008
卷号	93 期号:24 页码:art. no. 242107
关键词	conduction bands III-V semiconductors indium compounds interface states semiconductor heterojunctions silicon compounds valence bands wide band gap semiconductors X-ray photoelectron spectra
ISSN号	0003-6951
通讯作者	zhang bl chinese acad sci inst semicond key lab semicond mat sci pob 912 beijing 100083 peoples r china. e-mail address: zhangbaoli@semi.ac.cn ; xlliu@semi.ac.cn ; qszhu@semi.ac.cn
中文摘要	the valence band offset (vbo) of inn/4h-sic heterojunction has been directly measured by x-ray photoelectron spectroscopy. the vbo is determined to be 0.55 +/- 0.23 ev and the conduction band offset is deduced to be -2.01 +/- 0.23 ev, indicating that the heterojunction has a type-i band alignment. the accurate determination of the valence and conduction band offsets is important for applications of inn/sic optoelectronic devices.
学科主题	半导体材料
收录类别	SCI
资助信息	863 high technology r&d program of china 2007aa03z402 2007aa03z451 special funds for major state basic research project (973 program) of china 2006cb604907 national science foundation of china 60506002 60776015this work was supported by the 863 high technology r&d program of china (grant nos. 2007aa03z402 and 2007aa03z451), the special funds for major state basic research project (973 program) of china (grant no. 2006cb604907), and the national science foundation of china (grant nos. 60506002 and 60776015).
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7455]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang BL,Sun GS,Guo Y,et al. Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy[J]. applied physics letters,2008,93(24):art. no. 242107.
APA	Zhang BL.,Sun GS.,Guo Y.,Zhang PF.,Zhang RQ.,...&Wang ZG.(2008).Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy.applied physics letters,93(24),art. no. 242107.
MLA	Zhang BL,et al."Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy".applied physics letters 93.24(2008):art. no. 242107.