Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN

	Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN
	Deng QW
刊名	applied physics letters
	2011
卷号	98 期号:10 页码:article no.102104
关键词	QUANTUM-WELL-STRUCTURE ALGAN/GAN HETEROSTRUCTURE YELLOW LUMINESCENCE DEEP LEVELS TRAP PERFORMANCE FREQUENCY EPILAYERS ORIGIN DIODES
ISSN号	0003-6951
通讯作者	hou, qf, chinese acad sci, ctr mat sci, inst semicond, pob 912, beijing 100083, peoples r china. qfhou@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	knowledge innovation engineering of chinese academy of sciences [yyyj-0701-02]; national nature sciences foundation of china [60890193, 60906006]; state key development program for basic research of china [2006cb604905, 2010cb327503]; chinese academy of sciences [iscas2008t01, iscas2009l01, iscas2009l02]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	the influence of electric field on persistent photoconductivity in unintentionally doped n-gan is investigated. it was found that under higher electric field the build-up course was slowed down while the decay course was accelerated. after a higher-voltage pulse, it was observed that the current dropped to a value lower than the dark current, and a current increase that lasted for thousands of seconds was observed. it is suggested that the above phenomena should be caused by the increase in capture rate of electron traps with electric field and are related to the coulomb-repulsive characteristic of defects related to persistent photoconductivity. (c) 2011 american institute of physics. [doi:10.1063/1.3562008]
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20821]
专题	半导体研究所_半导体材料科学中心
推荐引用方式 GB/T 7714	Deng QW. Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN[J]. applied physics letters,2011,98(10):article no.102104.
APA	Deng QW.(2011).Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN.applied physics letters,98(10),article no.102104.
MLA	Deng QW."Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN".applied physics letters 98.10(2011):article no.102104.