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High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission 期刊论文
applied physics letters, 2014, 卷号: 105, 期号: 14, 页码: 141101
Wang, HL; Yu, HY; Zhou, XL; Kan, Q; Yuan, LJ; Chen, WX; Wang, W; Ding, Y; Pan, JQ
收藏  |  浏览/下载：17/0  |  提交时间：2015/03/20
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:  Jia CH;  Song HP
收藏  |  浏览/下载：118/2  |  提交时间：2011/07/05
Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL; Chen YH; Jiang CY; Liu Y; Ma H
收藏  |  浏览/下载：36/4  |  提交时间：2011/07/05
Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: 463
Li, TF; Chen, YH; Lei, W; Zhou, XL; Luo, S; Hu, YZ; Wang, LJ; Yang, T; Wang, ZG
收藏  |  浏览/下载：18/0  |  提交时间：2012/02/06
Luminous efficacy and color rendering index of high power white LEDs packaged by using red phosphor 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 1, 页码: 014011-1-014011-3
作者:  Lu Pengzhi;  Yang Hua
收藏  |  浏览/下载：8/0  |  提交时间：2011/08/16
High-power quantum dot superluminescent diode with integrated optical amplifier section 期刊论文
electronics letters, 2011, 卷号: 47, 期号: 21, 页码: 1191-
Wang, ZC; Jin, P; Lv, XQ; Li, XK; Wang, ZG
收藏  |  浏览/下载：13/0  |  提交时间：2012/02/06
Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.33301
作者:  Liu XF;  Yan GG;  Zheng L;  Dong L
收藏  |  浏览/下载：37/3  |  提交时间：2011/07/05
The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914
作者:  Jin P;  Ye XL;  Zhou XL
收藏  |  浏览/下载：49/4  |  提交时间：2011/07/05
Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition 期刊论文
rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251
作者:  Li GK
收藏  |  浏览/下载：74/2  |  提交时间：2011/07/05
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW
收藏  |  浏览/下载：52/10  |  提交时间：2011/07/05

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