The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing

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	The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing
	Jin P; Ye XL; Zhou XL
刊名	applied physics letters
	2011
卷号	98 期号:7 页码:article no.71914
关键词	SPECTROSCOPY
ISSN号	0003-6951
通讯作者	chen, yh, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. yhchen@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	national natural science foundation of china [60625402, 60990313]; 973 program [2006cb604908, 2006cb921607]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	for the inas/gaas quantum dot (qd) system, the evolution of wetting layer (wl) with inas deposition thickness has been studied under different postgrowth annealing (pga) durations using reflectance difference spectroscopy. for the sample without pga, wl thickness remains constant after the formation of qds, exhibiting a typical two-stage evolution, whereas for the samples with pga, wl thickness continuously increases linearly with a reduced slope after the formation of qds and is fixed in ripening growth, indicating a three-stage evolution. by adopting a theoretical model, we have well simulated the two kinds of evolution and found that the variations of qd's morphology and the interaction of qds occurring during pga lead to the different evolution behaviors of wl. (c) 2011 american institute of physics. [doi:10.1063/1.3552967]
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21309]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Jin P,Ye XL,Zhou XL. The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing[J]. applied physics letters,2011,98(7):article no.71914.
APA	Jin P,Ye XL,&Zhou XL.(2011).The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing.applied physics letters,98(7),article no.71914.
MLA	Jin P,et al."The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing".applied physics letters 98.7(2011):article no.71914.