CORC

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CORC

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Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW
收藏  |  浏览/下载：52/10  |  提交时间：2011/07/05
Photoluminescence from C+ ion-implanted and electrochemical etched Si layers 期刊论文
applied surface science, 2006, 卷号: 252, 期号: 24, 页码: 8424-8427
Shi LW (Shi Liwei); Wang Q (Wang Qiang); Li YG (Li Yuguo); Xue CS (Xue Chengshan); Zhuang HZ (Zhuang Huizhao)
收藏  |  浏览/下载：33/0  |  提交时间：2010/04/11
Electron irradiation-induced defects in InP pre-annealed at high temperature 期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383
Zhao YW (Zhao Y. W.); Dong ZY (Dong Z. Y.); Deng AH (Deng A. H.)
收藏  |  浏览/下载：42/0  |  提交时间：2010/04/11
Amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma 期刊论文
journal of crystal growth, 2004, 卷号: 264, 期号: 1-3, 页码: 7-12
Hu ZH; Liao XB; Diao HW; Kong GL; Zeng XB; Xu YY
收藏  |  浏览/下载：32/3  |  提交时间：2010/03/09
Annealing and activation of silicon implanted in semi-insulating InP substrates 期刊论文
materials science in semiconductor processing, 2003, 卷号: 6, 期号: 4, 页码: 215-218
Dong HW; Zhao YW; Li JM
收藏  |  浏览/下载：47/0  |  提交时间：2010/08/12
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient 会议论文
iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002
Wang QY; Wang JH; Deng HF; Lin LY
收藏  |  浏览/下载：17/0  |  提交时间：2010/11/15
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 516-520
Pan Z; Li LH; Zhang W; Wang XU; Lin YW; Wu RH
收藏  |  浏览/下载：82/10  |  提交时间：2010/08/12
Pulsed excimer laser annealing of Mg-doped cubic GaN 期刊论文
journal of crystal growth, 2000, 卷号: 209, 期号: 1, 页码: 203-207
作者:  Zhao DG
收藏  |  浏览/下载：46/0  |  提交时间：2010/08/12

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