Pulsed excimer laser annealing of Mg-doped cubic GaN

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	Pulsed excimer laser annealing of Mg-doped cubic GaN
	Zhao DG
刊名	journal of crystal growth
	2000
卷号	209 期号:1 页码:203-207
关键词	annealing cubic GaN Mg doping photoluminescence MOLECULAR-BEAM EPITAXY III-V NITRIDE P-TYPE GAN OPTICAL-PROPERTIES COMPENSATION DIODES FILMS
ISSN号	0022-0248
通讯作者	xu dp,chinese acad sci,inst semicond,natl res ctr optoelect technol,beijing 100083,peoples r china.
中文摘要	a krf (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing (pla) on mg-doped cubic gan alms. the laser-induced changes were monitored by photoluminescence (pl) measurement. it indicated that deep levels in as-grown cubic gan : mg films were neutralized by h and pla treatment could break mg-h-n complex. the evolution of emissions around 426 and 468 nm with different pla conditions reflected the different activation of the involved deep levels. rapid thermal annealing (rta) in n-2 atmosphere reverts the luminescence of laser annealed samples to that of the pre-annealing state. the reason is that most h atoms still remained in the epilayers after pla due to the short duration of the pulses and reoccupied the original locations during rta. (c) 2000 elsevier science b.v. all rights reserved. pacs: 61.72.vv; 61.72.cc; 18.55. -m.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12716]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao DG. Pulsed excimer laser annealing of Mg-doped cubic GaN[J]. journal of crystal growth,2000,209(1):203-207.
APA	Zhao DG.(2000).Pulsed excimer laser annealing of Mg-doped cubic GaN.journal of crystal growth,209(1),203-207.
MLA	Zhao DG."Pulsed excimer laser annealing of Mg-doped cubic GaN".journal of crystal growth 209.1(2000):203-207.