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GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 33, 页码: 335102
He JF; Wang HL; Shang XJ; Li MF; Zhu Y; Wang LJ; Yu Y; Ni HQ; Xu YQ; Niu ZC
收藏  |  浏览/下载：23/0  |  提交时间：2012/01/06
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:  Li JB
收藏  |  浏览/下载：59/6  |  提交时间：2011/07/05
Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates 期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 9, 页码: art. no. 094903
Li MC; Qiu YX; Liu GJ; Wang YT; Zhang BS; Zhao LC
收藏  |  浏览/下载：31/0  |  提交时间：2010/03/08
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:  Zhang XW;  You JB;  Yin ZG
收藏  |  浏览/下载：70/1  |  提交时间：2010/03/08
Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 7, 页码: art. no. 076104
作者:  Wang LJ;  Yang H;  Jiang DS;  Zhao DG;  Zhang SM
收藏  |  浏览/下载：78/0  |  提交时间：2010/03/08
Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector 期刊论文
acta physica sinica, 2009, 卷号: 58, 期号: 11, 页码: 7952-7957
Zhang S (Zhang Shuang); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Zhu JJ (Zhu Jian-Jun); Zhang SM (Zhang Shu-Ming); Wang YT (Wang Yu-Tian); Duan LH (Duan Li-Hong); Liu WB (Liu Wen-Bao); Jiang DS (Jiang De-Sheng); Yang H (Yang Hui)
收藏  |  浏览/下载：137/40  |  提交时间：2010/03/08
GaN  
Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films 期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 4, 页码: art. no. 041901
作者:  Yang H;  Wang H;  Wang H;  Wang YT;  Yang H
收藏  |  浏览/下载：64/1  |  提交时间：2010/03/08
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles 期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ; Zhu LF; Zhao YH; Liu BG
收藏  |  浏览/下载：217/56  |  提交时间：2010/03/08
Dislocation scattering in AlxGa1-xN/GaN heterostructures 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: art. no. 182111
Xu, XQ; Liu, XL; Han, XX; Yuan, HR; Wang, J; Guo, Y; Song, HP; Zheng, GL; Wei, HY; Yang, SY; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：61/0  |  提交时间：2010/03/08
Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 11, 页码: 4143-4146
Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Zhang, SM; Wang, YT; Yang, H
收藏  |  浏览/下载：15/0  |  提交时间：2010/03/08

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