Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films | |
Wang LJ; Yang H; Jiang DS![]() ![]() ![]() ![]() ![]() ![]() | |
刊名 | chinese physics letters
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2009 | |
卷号 | 26期号:7页码:art. no. 076104 |
关键词 | DENSITIES CRYSTALS LAYERS |
ISSN号 | 0256-307x |
通讯作者 | zhang sm chinese acad sci state key lab integrated optoelect inst semicond pob 912 beijing 100083 peoples r china. e-mail address: smzhang@red.semi.ac.cn |
中文摘要 | a method for accurate determination of the curvature radius of semiconductor thin films is proposed. the curvature-induced broadening of the x-ray rocking curve (xrc) of a heteroepitaxially grown layer can be determined if the dependence of the full width at half maximum (fwhm) of xrc is measured as a function of the width of incident x-ray beam. it is found that the curvature radii of two gan films grown on a sapphire wafer are different when they are grown under similar mocvd conditions but have different values of layer thickness. at the same time, the dislocation-induced broadening of xrc and thus the dislocation density of the epitaxial film can be well calculated after the curvature correction. |
学科主题 | 半导体物理 |
收录类别 | SCI |
资助信息 | national natural science foundation of china 60776047 608360036047602160576003 |
语种 | 英语 |
公开日期 | 2010-03-08 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/7087] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Wang LJ,Yang H,Jiang DS,et al. Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films[J]. chinese physics letters,2009,26(7):art. no. 076104. |
APA | Wang LJ.,Yang H.,Jiang DS.,Zhao DG.,Zhang SM.,...&Wang H.(2009).Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films.chinese physics letters,26(7),art. no. 076104. |
MLA | Wang LJ,et al."Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films".chinese physics letters 26.7(2009):art. no. 076104. |
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