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CORC

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Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors 期刊论文
CHINESE JOURNAL OF ELECTRONICS, 2021, 卷号: 30, 期号: 1, 页码: 180-184
作者:  Liu, BK (Liu Bingkai)[ 1,2,3 ];  Li, YD (Li Yudong)[ 1,2 ];  Wen, L (Wen Lin)[ 1,2 ];  Zhou, D (Zhou Dong)[ 1,2 ];  Feng, J (Feng Jie)[ 1,2 ]
收藏  |  浏览/下载：31/0  |  提交时间：2021/05/10
Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors 期刊论文
RESULTS IN PHYSICS, 2020, 卷号: 19, 期号: 12, 页码: 1-7
作者:  Liu, BK (Liu, Bingkai)[ 1,2,3 ];  Li, YD (Li, Yudong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ]
收藏  |  浏览/下载：19/0  |  提交时间：2021/03/19
Impacts of Random Telegraph Noise (RTN) on Digital Circuits 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015
Luo, Mulong; Wang, Runsheng; Guo, Shaofeng; Wang, Jing; Zou, Jibin; Huang, Ru
收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03
Investigation of Random Telegraph Noise in the Dark Current of Germanium Waveguide Photodetector 期刊论文
ieee journal of selected topics in quantum electronics, 2014
Tu, Zhijuan; Zhou, Zhiping; Wang, Xingjun
收藏  |  浏览/下载：6/0  |  提交时间：2015/11/10
Deep insights into low frequency noise behavior of tunnel FETs with source junction engineering 其他
2014-01-01
Huang, Qianqian; Huang, Ru; Chen, Cheng; Wu, Chunlei; Wang, Jiaxin; Wang, Chao; Wang, Yangyuan
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13
Characterization of Random Telegraph Noise in Scaled High-kappa/Metal-gate MOSFETs with SiO2/HfO2 Gate Dielectrics 其他
2013-01-01
Li, Meng; Wang, Runsheng; Zou, Jibin; Huang, Ru
收藏  |  浏览/下载：6/0  |  提交时间：2015/11/13
New insights into AC RTN in scaled high-��/ metal-gate MOSFETs under digital circuit operations 其他
2012-01-01
Zou, Jibin; Wang, Runsheng; Gong, Nanbo; Huang, Ru; Xu, Xiaoqing; Ou, Jiaojiao; Liu, Changze; Wang, Jianping; Liu, Jinhua; Wu, Jingang; Yu, Shaofeng; Ren, Pengpeng; Wu, Hanming; Lee, Shiuh-Wuu; Wang, Yangyuan
收藏  |  浏览/下载：7/0  |  提交时间：2015/11/13
Experimental methods to suppress random telegraph signal noise in acoustic charge transport nanostructure devices 期刊论文
2012, 卷号: 209, 页码: 1530-1537
作者:  Song, Li;  Zhang, Chuanyu;  Chen, Shuwei;  Gao, Jie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/05
Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN p-Type Metal-Oxide-Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition 其他
2010-01-01
Zhang, Liangliang; Liu, Changze; Wang, Runsheng; Huang, Ru; Yu, Tao; Zhuge, Jing; Kirsch, Paul; Tseng, Hsing-Huang; Wang, Yangyuan
收藏  |  浏览/下载：2/0  |  提交时间：2015/11/13
Characteristics of gate current random telegraph signal noise in SiON/HfO2/TaN p-type metal-oxide-semiconductor field-effect transistors under negative bias temperature instability stress condition 期刊论文
Japanese Journal of Applied Physics, 2010
Zhang, Liangliang; Liu, Changze; Wang, Runsheng; Huang, Ru; Yu, Tao; Zhuge, Jing; Kirsch, Paul; Tseng, Hsing-Huang; Wang, Yangyuan
收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03

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