Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors

doi:10.1049/cje.2020.12.002

CORC > 新疆理化技术研究所 > 中国科学院新疆理化技术研究所 > 中国科学院特殊环境功能材料与器件重点试验室

	Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors
	Liu, BK (Liu Bingkai)[ 1,2,3 ]; Li, YD (Li Yudong)[ 1,2 ]; Wen, L (Wen Lin)[ 1,2 ]; Zhou, D (Zhou Dong)[ 1,2 ]; Feng, J (Feng Jie)[ 1,2 ]; Zhang, X (Zhang Xiang)[ 1,2,3 ]; Cai, YL (Cai Yulong)[ 1,2,3 ]; Fu, J (Fu Jing)[ 1,2,3 ]; Guo, Q (Guo Qi)[ 1,2 ]
刊名	CHINESE JOURNAL OF ELECTRONICS
	2021
卷号	30 期号:1 页码:180-184
关键词	Backside‐ illuminated CMOS image sensors Dark signal behaviors Displacement damage effects Neutron irradiation
ISSN号	1022-4653
DOI	10.1049/cje.2020.12.002
英文摘要	The purpose of this work is to investigate the influence of the epitaxial layer thickness of Backside-illuminated CMOS image sensors (BSI CISs) on dark signal behaviors. BSI CISs with the high quantum efficiency and sensitivity were irradiated by 1 MeV neutron up to the fluences of 10(9) cm(-2). The displacement damage induced variations of the mean dark signal, Dark signal nonuniformity (DSNU), dark signal spikes and Random telegraph signal (RTS) on the different epitaxial layer thicknesses are analyzed. The experimental results show that there is no obvious correlation between the degradations of dark signal parameters and the epitaxial layer thickness, suggesting that the electric-optical performance of BSI CISs can be improved by optimizing the epitaxial layer thickness.
WOS记录号	WOS:000636744400022
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/7825]
专题	新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室
通讯作者	Li, YD (Li Yudong)[ 1,2 ]
作者单位	1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China 3.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
推荐引用方式 GB/T 7714	Liu, BK ,Li, YD ,Wen, L ,et al. Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors[J]. CHINESE JOURNAL OF ELECTRONICS,2021,30(1):180-184.
APA	Liu, BK .,Li, YD .,Wen, L .,Zhou, D .,Feng, J .,...&Guo, Q .(2021).Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors.CHINESE JOURNAL OF ELECTRONICS,30(1),180-184.
MLA	Liu, BK ,et al."Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors".CHINESE JOURNAL OF ELECTRONICS 30.1(2021):180-184.