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A Charge Density Model of Silicon-nanowire GAA MOSFET Incoroperating the Source-drian Tunneling Effect for IC Design
会议论文
Guilin, China, June 4-6, 2021
作者:
Cheng H(程贺)
;
Zhang C(张超)
;
Liu TF(刘铁锋)
;
Xie C(谢闯)
;
Yang ZJ(杨志家)
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2022/02/04
ballistic transport
compact model
integrated-cricuit design
sub-7 nm GAA MOSFET
the source-drain tunneling
A new method for directly locating single-event latchups using silicon pixel sensors in a gas detector
期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2020, 卷号: 962, 页码: 6
作者:
Li, Zili
;
Fan, Yan
;
Wang, Zhen
;
Liu, Jun
;
Sun, Xiangming
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  |  
浏览/下载:22/0
  |  
提交时间:2022/01/18
SEL
Topmetal
CMOS
Silicon pixel sensor
Track projection
TID Response of Bulk Si PMOS FinFETs: Bias, Fin Width, and Orientation Dependence
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 7, 页码: 1320-1325
作者:
Ren, ZX (Ren, Zhexuan)[ 1 ]
;
An, X (An, Xia)[ 1 ]
;
Li, GS (Li, Gensong)[ 1 ]
;
Chen, G (Chen, Gong)[ 1 ]
;
Li, M (Li, Ming)[ 1 ]
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  |  
浏览/下载:35/0
  |  
提交时间:2020/09/09
Bulk Si FinFET
fin width
orientation
PMOS
threshold voltage shift
total ionizing dose (TID)
High Performance and Excellent Stability of All-Solid-State Electrochromic Devices Based on a Li1.85AlOz Ion Conducting Layer
期刊论文
ACS SUSTAINABLE CHEMISTRY & ENGINEERING, 2019, 卷号: 7, 期号: 20, 页码: 17390
作者:
Xie, Lingling
;
Zhao, Shuwen
;
Zhu, Ying
;
Zhang, Qixuan
;
Chang, Tianci
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浏览/下载:82/0
  |  
提交时间:2019/12/26
electrochromic
energy saving materials
lithium ion conductor
aluminate-lithium alloy
Off quadrature mach-zehnder modulator biasing
专利
专利号: US10425164, 申请日期: 2019-09-24, 公开日期: 2019-09-24
作者:
ROPE, TODD
;
NAGARAJAN, RADHAKRISHNAN L.
;
SHANKAR, HARI
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浏览/下载:23/0
  |  
提交时间:2019/12/23
Single-Junction Organic Solar Cell Containing a Fluorinated Heptacyclic Carbazole-Based Ladder-Type Acceptor Affords over 13% Efficiency with Solution-Processed Cross-Linkable Fullerene as an Interfacial Layer
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 34, 页码: 31069-31077
作者:
Chen, Tsung-Wei
;
Chang, Chia-Chih
;
Hsiao, Yu-Tang
;
Chan, ChoonKee
;
Hong, Ling
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浏览/下载:73/0
  |  
提交时间:2019/09/30
Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 期号: 2, 页码: 950-956
作者:
Li, Yunpeng
;
Zhang, Jiawei
;
Yang, Jin
;
Yuan, Yvzhuo
;
Hu, Zhenjia
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  |  
浏览/下载:10/0
  |  
提交时间:2019/12/11
CMOS
IC
oxide semiconductor
thin-film transistor (TFT)
LC Low-pass filter based on through-silicon via
会议论文
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01
作者:
Wang, Fengjuan
;
Huang, Jia
;
Yu, Ningmei
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  |  
浏览/下载:3/0
  |  
提交时间:2019/12/20
low-pass filter
through-silicon via (TSV)
three-dimensional integrated circuits (3-D IC)
A highly efficient heat-dissipation system using RDL and TTSV array in 3D IC
会议论文
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01
作者:
Wang, Fengjuan
;
Li, Yue
;
Yu, Ningmei
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  |  
浏览/下载:10/0
  |  
提交时间:2019/12/20
three-dimensional integrated circuits (3-D IC)
thermal through-silicon via (TTSV)
redistribution layer (RDL)
heat-dissipation
An Effective Method of Reducing TSV Thermal Stress by STI
会议论文
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01
作者:
Wang, Fengjuan
;
Qu, Xiaoqing
;
Yu, Ningmei
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  |  
浏览/下载:4/0
  |  
提交时间:2019/12/20
Keywords Three-dimensional integrated circuits (3-D IC)
through-silicon via (TSV)
shallow trench isolation (STI)
thermal stress
keep-out zone (KOZ)
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