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浏览/检索结果: 共5条，第1-5条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes 期刊论文 APPLIED SURFACE SCIENCE, 2018, 卷号: 428, 页码: 61-65 作者:  Lu, Yuanxi[1];  Huang, Jian[2];  Li, Bing[3];  Tang, Ke[4];  Ma, Yuncheng[5] 收藏  |  浏览/下载：8/0  |  提交时间：2019/04/24 ZnO  Heterojunction  Magnetron sputtering  UV   A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes 期刊论文 Applied Surface Science, 2017, 卷号: 428, 页码: 61-65 作者:  Lu, Yuanxi;  Huang, Jian*;  Li, Bing;  Tang, Ke*;  Ma, Yuncheng 收藏  |  浏览/下载：8/0  |  提交时间：2019/12/04 ZnO  Heterojunction  Magnetron sputtering  UV   Substrate temperature and thickness dependence of properties of boron and gallium co-doped ZnO films 期刊论文 SURFACE ENGINEERING, 2017, 卷号: 33, 页码: 270-275 作者:  Yang, J.[1];  Huang, J.[2];  Lu, Y.X.[3];  Ji, H.H.[4];  Zhang, L.[5] 收藏  |  浏览/下载：2/0  |  提交时间：2019/04/24 Boron and gallium co-doped ZnO  Magnetron sputtering  Substrate temperature  Thickness   Effect of Sputtering Pressure on the Properties of Boron and Gallium Co-doped ZnO Thin Films 会议论文 International Symposium on Materials Application and Engineering (SMAE), 2016-08-20 作者:  Chen, Mengfei[1];  Huang, Jian[2];  Yang, Jin[3];  Tang, Ke[4];  Lu, Yuanxi[5] 收藏  |  浏览/下载：5/0  |  提交时间：2019/04/26 Effect of RF power and substrate temperature on the properties of boron and gallium co-doped ZnO films 期刊论文 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2016, 卷号: 53, 页码: 84-88 作者:  Yang, Jin[1];  Huang, Jian[2];  Ji, Huanhuan[3];  Tang, Ke[4];  Zhang, Lei[5] 收藏  |  浏览/下载：5/0  |  提交时间：2019/04/26 Boron and gallium co-doped Zno  Magnetron sputtering  RF power