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	Effect of RF power and substrate temperature on the properties of boron and gallium co-doped ZnO films
	Yang, Jin[1]; Huang, Jian[2]; Ji, Huanhuan[3]; Tang, Ke[4]; Zhang, Lei[5]; Ren, Bing[6]; Cao, Meng[7]; Wang, Linjun[8]
刊名	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
	2016
卷号	53页码:84-88
关键词	Boron and gallium co-doped Zno Magnetron sputtering RF power
ISSN号	1369-8001
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2233475
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 2.[2]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 3.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 4.[4]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 5.[5]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 6.[6]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 7.[7]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 8.[8]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China.
推荐引用方式 GB/T 7714	Yang, Jin[1],Huang, Jian[2],Ji, Huanhuan[3],et al. Effect of RF power and substrate temperature on the properties of boron and gallium co-doped ZnO films[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2016,53:84-88.
APA	Yang, Jin[1].,Huang, Jian[2].,Ji, Huanhuan[3].,Tang, Ke[4].,Zhang, Lei[5].,...&Wang, Linjun[8].(2016).Effect of RF power and substrate temperature on the properties of boron and gallium co-doped ZnO films.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,53,84-88.
MLA	Yang, Jin[1],et al."Effect of RF power and substrate temperature on the properties of boron and gallium co-doped ZnO films".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 53(2016):84-88.

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